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参数资料
| 型号： | IS62UP25616LL-55BI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | MINI, BGA-48 |
| 文件页数： | 11/13页 |
| 文件大小： | 83K |
| 代理商： | IS62UP25616LL-55BI |
IS62Ux25616 SERIES
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
TARGET SPECIFICATION SR070-0T
05/01/99
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10
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12
ISSI
TARGET SPECIFICATION
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-55
-70
-100
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tRC
Read Cycle Time
55
—
70
—
100
—
ns
tAA
Address Access Time
—
55
—
70
—
100
ns
tOHA
Output Hold Time
10
—
10
—
10
—
ns
tACE
CE Access Time
—
55
—
70
—
100
ns
tDOE
OE Access Time
—
30
—
35
—
50
ns
tHZOE(2)
OE to High-Z Output
—
20
—
25
—
30
ns
tLZOE(2)
OE to Low-Z Output
5
—
5
—
5
—
ns
tHZCE(2)
CE to High-Z Output
0
20
0
25
0
30
ns
tLZCE(2)
CE to Low-Z Output
10
—
10
—
10
—
ns
tBA
LB, UB Access Time
—
55
—
70
—
100
ns
tHZB
LB, UB to High-Z Output
0
20
0
25
0
35
ns
tLZB
LB, UB to Low-Z Output
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels
of 0.4 to 2.2V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured
±500 mV from steady-state voltage. Not 100% tested.
DATA VALID
PREVIOUS DATA VALID
t AA
t OHA
t RC
DOUT
ADDRESS
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (
CE = OE = VIL, UB or LB = VIL)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS62VV25616L | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM |
| IS62VV25616LL-70MI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM |
| IS62VV25616LL-70T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
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