参数资料
型号: IS62UP25616LL-55BI
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 256K X 16 STANDARD SRAM, 55 ns, PBGA48
封装: MINI, BGA-48
文件页数: 8/13页
文件大小: 83K
代理商: IS62UP25616LL-55BI
IS62Ux25616 SERIES
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICATION SR070-0T
05/01/99
ISSI
TARGET SPECIFICATION
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VCC
Power Supply Voltage Related to GND
–0.5 to +4.0
V
VTERM
Terminal Voltage with Respect to GND
–0.5 to Vcc + 0.5
V
TSTG
Storage Temperature
–65 to +150
°C
TBIAS
Temperature Under Bias
Com.
–10 to +85
°C
Ind.
–45 to +90
°C
PT
Power Dissipation
2.0
W
Iout
DC Output Current
±20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
OPERATING RANGE
Range
Ambient Temperature
Commercial
0
°C to +70°C
Industrial
–40
°C to +85°C
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
TRUTH TABLE
I/O PIN
Mode
WE
CE
OE
LB
UB
I/O0-I/O7
I/O8-I/O15
Vcc Current
Not Selected
X
H
X
High-Z
ISB, ISB1
X
H
High-Z
Output Disabled
H
L
H
X
High-Z
ICC, ICC1
X
L
X
H
High-Z
Read
H
L
H
DOUT
High-Z
ICC, ICC1
H
L
H
L
High-Z
DOUT
H
LLLL
DOUT
Write
L
X
L
H
DIN
High-Z
ICC, ICC1
L
X
H
L
High-Z
DIN
LL
X
L
DIN
Notes:
1. H = VIH, L = VIL, X = Don't Care.
2.
UB, LB (Upper, Lower Byte enable).
These active LOW inputs allow individual bytes to be written or read.
When
LB is LOW, data is written or read to the lower byte, I/O0-I/O7.
When
UB is LOW, data is written or read to the upper byte, I/O8-I/O15.
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