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参数资料
| 型号： | IS62WV10248DBLL-45MLI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 1M X 8 STANDARD SRAM, 45 ns, PBGA48 |
| 封装： | 9 X 11 MM, LEAD FREE, MINI, BGA-48 |
| 文件页数： | 1/15页 |
| 文件大小： | 456K |
| 代理商： | IS62WV10248DBLL-45MLI |
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. 00B
03/04/09
IS62WV10248DALL/BLL
IS65WV10248DALL/BLL
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
1M x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
High-speedaccesstime:45ns,55ns
CMOSlowpoweroperation
– 36 mW (typical) operating
–12W(typical)CMOSstandby
TTLcompatibleinterfacelevels
Singlepowersupply
–1.65V--2.2VVdd (62/65WV10248dALL)
–2.4V--3.6VVdd (62/65WV10248dBLL)
Fullystaticoperation:noclockorrefresh
required
Threestateoutputs
Datacontrolforupperandlowerbytes
Automotivetemperature(-40oC to +125oC)
Lead-freeavailable
DESCRIPTION
The
ISSIIS62WV10248DALL/IS62WV10248DBLLare
high-speed,8MbitstaticRAMsorganizedas1Mwords
by 8 bits. It is fabricated using
ISSI'shigh-performance
CMOStechnology.Thishighlyreliableprocesscoupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1isHIGH(deselected)orwhenCS2isLOW
(deselected), the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOSinputlevels.
Easy memory expansion is provided by using Chip Enable
andOutputEnableinputs.TheactiveLOWWriteEnable
(WE)
controls both writing and reading of the memory.
The IS62WV10248DALL and IS62WV10248DBLL are
packagedintheJEDECstandard48-pinminiBGA(9mm
x 11mm) and 44-PinTSOP(TYPEII).
FUNCTIONAL BLOCK DIAGRAM
PRELIMINARY INFORMATION
MARCH 2009
A0-A19
CS1
OE
WE
1M x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
CS2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS62WV10248DBLL-45TLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62WV10248DBLL-55MLI | 功能描述:静态随机存取存储器 8M (1Mx8) 55ns Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS62WV10248DBLL-55MLI-TR | 功能描述:静态随机存取存储器 8M (1Mx8) 55ns Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS62WV10248DBLL-55TLI | 功能描述:静态随机存取存储器 8M (1Mx8) 55ns Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS62WV10248DBLL-55TLI-TR | 功能描述:静态随机存取存储器 8M (1Mx8) 55ns Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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