参数资料
型号: ISL6263CRZ
厂商: Intersil
文件页数: 18/19页
文件大小: 0K
描述: IC VREG CORE 5BIT 1PHASE 32-QFN
标准包装: 60
应用: 转换器,Intel IMVP-6
输入电压: 5 V ~ 25 V
输出数: 1
输出电压: 0.41 V ~ 1.29 V
工作温度: -10°C ~ 100°C
安装类型: 表面贴装
封装/外壳: 32-VFQFN 裸露焊盘
供应商设备封装: 32-QFN(5x5)
包装: 管件
ISL6263
UGATE, BOOT, and PHASE
PHASE is the return path for the entire UGATE high-side
MOSFET gate driver. The layout for these signals require
similar treatment, but to a greater extent, than those for
LGATE, PVCC, and PGND. These signals swing from
approximately VIN to VSS and are more likely to couple into
other signals.
VSEN and RTN
These traces should be laid out as noise sensitive. For
optimum load line regulation performance, the traces
connecting these two pins to the Kelvin sense leads of the
processor should be laid out away from rapidly rising voltage
nodes, (switching nodes) and other noisy traces. The filter
capacitors C FILTER1 , C FILTER2 , and C FILTER3 used in
conjunction with filter resistors R FILTER1 and R FILTER2 form
common mode and differential mode filters as shown in
Figure 8. The noise environment of the application and
actual board layout conditions will drive the extent of filter
complexity. The maximum recommended resistance for
R FILTER1 and R FILTER2 is approximately 10 Ω to avoid
interaction with the 50k Ω input resistance of the remote
sense differential amplifier. The physical location of these
resistors is not as critical as the filter capacitors. Typical
capacitance values for C FILTER1 , C FILTER2 , and C FILTER3
range between 330pF to 1000pF and should be placed near
the IC.
RBIAS and I2UA
The resistors R RBIAS and R I2UA should be placed in close
proximity to the ISL6263 using a noise-free current return
path to the VSS pin.
SOFT, OCSET, V W, COMP, FB, VDIFF, DROOP,
DFB, VO, and VSUM
The traces and components associated with these pins
require close proximity to the IC as well as close proximity to
each other. This section of the converter circuit needs to be
located above the island of analog ground with the
single-point connection to the VSS pin.
Resistor R S
Resistor R S is preferably located near the boundary
between the power ground and the island of analog ground
connected to the VSS pin.
VID<0:4>, AF_EN, PGOOD, and VR_ON
These are logic signals that do not require special attention.
FDE
This logic signal should be treated as noise sensitive and
should be routed away from rapidly rising voltage nodes,
(switching nodes) and other noisy traces.
VIN
The VIN signal should be connected near the drain of the
high-side MOSFET.
Copper Size for the Phase Node
The parasitic capacitance and parasitic inductance of the
phase node should be kept very low to minimize ringing. It is
best to limit the size of the PHASE node copper in strict
accordance with the current and thermal management of the
application. An MLCC should be connected directly across
the drain of the high-side MOSFET and the source of the
low-side MOSFET to suppress turn-off voltage spikes.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
18
FN9213.2
June 10, 2010
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