参数资料
| 型号： | ISL6265AHRTZ-T |
| 厂商： | Intersil |
| 文件页数： | 22/23页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR MULTI-OUTPUT 48-TQFN |
| 标准包装： | 4,000 |
| 应用： | 控制器，AMD SVI 兼容移动式 CPU |
| 输入电压： | 5 V ~ 24 V |
| 输出数： | 3 |
| 输出电压： | 0.5 V ~ 1.55 V |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 48-WFQFN 裸露焊盘 |
| 供应商设备封装： | 48-TQFN-EP（6x6） |
| 包装： | 带卷 (TR) |
ISL6265A
distance between the power train and the control IC short
helps keep the gate drive traces short. These drive signals
include the LGATE, UGATE, PGND, PHASE and BOOT.
VIN PIN
The VIN pin should be connected close to the drain of the
high-side MOSFET, using a low- resistance and
VIAS TO
GROUND
PLANE
GND
OUTPUT
CAPACITORS
low-inductance path.
VCC PIN
VOUT
SCHOTTKY
DIODE
For best performance, place the decoupling capacitor very
close to the VCC and GND pins.
INDUCTOR
HIGH-SIDE
MOSFETS
PHASE
NODE
VIN
LOW-SIDE
MOSFETS
INPUT
CAPACITORS
PVCC PIN
For best performance, place the decoupling capacitor very
close to the PVCC and respective PGND pins, preferably on
FIGURE 13. TYPICAL POWER COMPONENT PLACEMENT
When placing MOSFETs, try to keep the source of the upper
MOSFETs and the drain of the lower MOSFETs as close as
thermally possible (see Figure 13). Input high-frequency
capacitors should be placed close to the drain of the upper
MOSFETs and the source of the lower MOSFETs. Place the
output inductor and output capacitors between the
MOSFETs and the load. High-frequency output decoupling
capacitors (ceramic) should be placed as close as possible
to the decoupling target (microprocessor), making use of the
shortest connection paths to any internal planes. Place the
components in such a way that the area under the IC has
less noise traces with high dV/dt and di/dt, such as gate
signals and phase node signals.
Signal Ground and Power Ground
The bottom of the ISL6265A QFN package is the signal
ground (GND) terminal for analog and logic signals of the IC.
Connect the GND pad of the ISL6265A to the island of
ground plane under the top layer using several vias, for a
robust thermal and electrical conduction path. Connect the
input capacitors, the output capacitors, and the source of the
lower MOSFETs to the power ground plane.
Routing and Connection Details
Specific pins (and the trace routing from them), require extra
attention during the layout process. The following
sub-sections outline concerns by pin name.
PGND PINS
This is the return path for the pull-down of the LGATE
low-side MOSFET gate driver. Ideally, PGND should be
connected to the source of the low-side MOSFET with a
low-resistance, low-inductance path.
the same side of the PCB as the ISL6265A IC.
ENABLE AND PGOOD PINS
These are logic signals that are referenced to the GND pin.
Treat as a typical logic signal.
FB PINS
The input impedance of the FB pin is high, so place the
voltage programming and loop compensation components
close to the COMP, FB, and GND pins keeping the high
impedance trace short.
FSET_NB PIN
This pin requires a quiet environment. The resistor R FSET
should be placed directly adjacent to this pin. Keep fast
moving nodes away from this pin.
LGATE ROUTING
The LGATE trace has a signal going through it that is both
high dV/dt and di/dt, with high peak charging and
discharging current. Route this trace in parallel with the trace
from the PGND pin. These two traces should be short, wide,
and away from other traces. There should be no other weak
signal traces in proximity with these traces on any layer.
BOOT AND PHASE ROUTING
The signals going through these traces are both high dv/dt
and high di/dt, with high peak charging and discharging
current. Route the UGATE and PHASE pins in parallel with
short and wide traces. There should be no other weak signal
traces in proximity with these traces on any layer.
Copper Size for the Phase Node
The parasitic capacitance and parasitic inductance of the
phase node should be kept very low to minimize ringing. It is
best to limit the size of the PHASE node copper in strict
accordance with the current and thermal management of the
application. An MLCC should be connected directly across
the drain of the upper MOSFET and the source of the lower
MOSFET to suppress the turn-off voltage.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
22
FN6884.0
May 11, 2009
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6265C | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Multi-Output Controller with Integrated MOSFET Drivers for AMD SVI Capable Mobile CPUs |
| ISL6265C_10 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Multi-Output Controller with Integrated MOSFET Drivers for AMD SVI Capable Mobile CPUs |
| ISL6265CEVAL1Z | 制造商:Intersil Corporation 功能描述:ISL6265 EVALUATION BOARD 1 - 48 LD TQFN - ROHS COMPLIANT - Bulk |
| ISL6265CHRTZ | 功能描述:电流型 PWM 控制器 MULTI-OUTPUT CNTRLRS PHS W/EMBEDDED GATE RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| ISL6265CHRTZ-T | 功能描述:电流型 PWM 控制器 MULTI-OUTPUT CNTRLRS PHS W/EMBEDDED GATE RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
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