参数资料
型号: ISL6322GIRZ-T
厂商: Intersil
文件页数: 31/39页
文件大小: 0K
描述: IC CTRLR PWM BUCK 48-QFN
标准包装: 4,000
应用: 控制器,Intel VR10、VR11、AMD CPU
输入电压: 5 V ~ 12 V
输出数: 1
输出电压: 0.38 V ~ 1.99 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 48-VFQFN 裸露焊盘
供应商设备封装: 48-QFN(7x7)
包装: 带卷 (TR)
ISL6322G
TABLE 9. REGISTER RGS2 (# OF PHASES/ADAPTIVE DEADTIME CONTROL/OVERVOLTAGE PROTECTION/SWITCHING
FREQUENCY) (Continued)
BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
NUMBER OF
ADAPTIVE DEADTIME
OVERVOLTAGE
SWITCHING
X
CH0
DT1
DT0
OVP
FS2
FS1
FS0
CHANNELS
CONTROL
PROTECTION LEVEL FREQUENCY
x
x
1
1
0
0
1
1
1
1
0
1
1
0
1
0
1-Phase
1-Phase
LGATE DETECT
LGATE DETECT
ALTERNATE
ALTERNATE
+15%
+30%
NOTE: It is recommended that frequency shifts occur in 15% increments only.
General Design Guide
This section is intended to provide a high-level explanation of
the steps necessary to create a multiphase power converter. It
is assumed that the reader is familiar with many of the basic
skills and techniques referenced in the following. In addition to
this guide, Intersil provides complete reference designs that
include schematics, bills of materials, and example board
layouts for all common microprocessor applications.
An additional term can be added to the lower-MOSFET loss
equation to account for additional loss accrued during the
dead time when inductor current is flowing through the
lower-MOSFET body diode. This term is dependent on the
diode forward voltage at I M , V D(ON) , the switching
frequency, f S , and the length of dead times, t D1 and t D2 , at
the beginning and the end of the lower-MOSFET conduction
interval respectively.
? IM
P LOW , 2 = V D ( ON ) ? f S ? ? ------ + I ----------- ? ? t
? I
+ ? ------ – ----------- ? ? t D2
2 ? ?
? N
Power Stages
The first step in designing a multiphase converter is to
determine the number of phases. This determination
? N 2 ?
?
P-P
d1
?
?
M I P-P
(EQ. 22)
depends heavily on the cost analysis, which in turn depends
on system constraints that differ from one design to the next.
Principally, the designer will be concerned with whether
components can be mounted on both sides of the circuit
board, whether through-hole components are permitted, the
total board space available for power-supply circuitry, and
the maximum amount of load current. Generally speaking,
the most economical solutions are those in which each
phase handles between 25A and 30A. All surface-mount
designs will tend toward the lower end of this current range.
If through-hole MOSFETs and inductors can be used, higher
per-phase currents are possible. In cases where board
space is the limiting constraint, current can be pushed as
high as 40A per phase, but these designs require heat sinks
and forced air to cool the MOSFETs, inductors and heat-
dissipating surfaces.
MOSFETS
The choice of MOSFETs depends on the current each
MOSFET will be required to conduct, the switching frequency,
the capability of the MOSFETs to dissipate heat, and the
availability and nature of heat sinking and air flow.
The total maximum power dissipated in each lower MOSFET
is approximated by the summation of P LOW,1 and P LOW,2 .
UPPER MOSFET POWER CALCULATION
In addition to r DS(ON) losses, a large portion of the
upper-MOSFET losses are due to currents conducted
across the input voltage (V IN ) during switching. Since a
substantially higher portion of the upper-MOSFET losses are
dependent on switching frequency, the power calculation is
more complex. Upper MOSFET losses can be divided into
separate components involving the upper-MOSFET
switching times, the lower-MOSFET body-diode
reverse-recovery charge, Q rr , and the upper MOSFET
r DS(ON) conduction loss.
When the upper MOSFET turns off, the lower MOSFET does
not conduct any portion of the inductor current until the
voltage at the phase node falls below ground. Once the
lower MOSFET begins conducting, the current in the upper
MOSFET falls to zero as the current in the lower MOSFET
ramps up to assume the full inductor current. In Equation 23,
the required time for this commutation is t 1 and the
I P-P
I M
P UP , 1 ≈ V IN ? ? ------ + ---------- ? ? ? ---- 1 ? ? f S
LOWER MOSFET POWER CALCULATION
The calculation for power loss in the lower MOSFET is
simple, since virtually all of the loss in the lower MOSFET is
approximated associated power loss is P UP,1 .
? t ?
? N 2 ? ? 2 ?
(EQ. 23)
due to current conducted through the channel resistance
(r DS(ON) ). In Equation 21, I M is the maximum continuous
output current, I P-P is the peak-to-peak inductor current (see
At turn on, the upper MOSFET begins to conduct and this
transition occurs over a time t 2 . In Equation 24, the
approximate power loss is P UP,2 .
? I M ? 2 I L , P-P 2 ? ( 1 – d )
P LOW , 1 = r DS ( ON ) ? ? ------ ? ? ( 1 – d ) + --------------------------------------
? I M I P-P ?
? ? ---- 2 ? ? f S
P UP , 2 ≈ V IN ? ? ------ – ---------- ?
Equation 1), and d is the duty cycle (V OUT /V IN ).
? N ? 12
(EQ. 21)
? t ?
? N 2 ? ? 2 ?
A third component involves the lower MOSFET
(EQ. 24)
reverse-recovery charge, Q rr . Since the inductor current has
31
FN6715.0
May 22, 2008
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