参数资料
型号: ISL6334ACRZ-TR5368
厂商: Intersil
文件页数: 26/31页
文件大小: 0K
描述: IC CTRLR PWM 4PHASE BUCK 40QFN
标准包装: 4,000
应用: 控制器,Intel VR11.1
输入电压: 3 V ~ 12 V
输出数: 1
输出电压: 0.5 V ~ 1.6 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 40-VFQFN 裸露焊盘
供应商设备封装: 40-QFN(6x6)
包装: 带卷 (TR)
ISL6334AR5368
At turn on, the upper MOSFET begins to conduct and this
transition occurs over a time t 2 . In Equation 27, the
approximate power loss is P UP,2 .
the power stage, since the DC resistance of the current
sense element may be changed according to the operational
temperature. R X in Equation 30 should be the maximum DC
P UP , 2 ≈ V IN ? ------ – ---------- ? ? ---- 2 ? f S
? I M I P-P ? ? t ?
? N 2 ? ? 2 ?
(EQ. 27)
resistance of the current sense element at the all operational
temperature.
In certain circumstances, it may be necessary to adjust the
A third component involves the lower MOSFET’s
reverse-recovery charge, Q rr . Since the inductor current has
fully commutated to the upper MOSFET before the
lower-MOSFET’s body diode can draw all of Q rr , it is
conducted through the upper MOSFET across VIN. The
power dissipated as a result is P UP,3 and is approximated in
Equation 28:
value of one or more ISEN resistors. When the components
of one or more channels are inhibited from effectively
dissipating their heat so that the affected channels run hotter
than desired, choose new, smaller values of RISEN for the
affected phases (see the section entitled “Channel-Current
Balance” on page 15). Choose R ISEN,2 in proportion to the
desired decrease in temperature rise in order to cause
P UP , 3 = V IN Q rr f S
(EQ. 28)
proportionally less current to flow in the hotter phase, as
shown in Equation 31:
R ISEN , 2 = R ISEN ---------- 2
Finally, the resistive part of the upper MOSFET’s is given in
Equation 29 as P UP,4 .
Δ T
Δ T 1
(EQ. 31)
The total power dissipated by the upper MOSFET at full load
can now be approximated as the summation of the results
from Equations 26, 27, and 28. Since the power equations
depend on MOSFET parameters, choosing the correct
MOSFETs can be an iterative process involving repetitive
solutions to the loss equations for different MOSFETs and
different switching frequencies, as shown in Equation 29.
In Equation 31, make sure that Δ T 2 is the desired temperature
rise above the ambient temperature, and Δ T 1 is the measured
temperature rise above the ambient temperature. While a
single adjustment according to Equation 31 is usually
sufficient, it may occasionally be necessary to adjust R ISEN
two or more times to achieve optimal thermal balance
between all channels.
I P-P2
? I M ?
P UP , 4 ≈ r DS ( ON ) ? ------ ? d + ---------- d
? N ? 12
2
(EQ. 29)
Load-Line Regulation Resistor
The load-line regulation resistor is labelled R FB in Figure 6.
Its value depends on the desired loadline requirement of the
Current Sensing Resistor
The resistors connected to the Isen+ pins determine the
application.
The desired loadline can be calculated using Equation 32:
I FL
gains in the load-line regulation loop and the channel-current
balance loop as well as setting the overcurrent trip point.
V DROOP
R LL = -------------------------
(EQ. 32)
R ISEN = --------------------------- --------------
105 × 10
Select values for these resistors by using Equation 30:
R X I OCP (EQ. 30)
N
where R ISEN is the sense resistor connected to the ISEN+
pin, N is the active channel number, R X is the resistance of
where I FL is the full load current of the specific application,
and VR DROOP is the desired voltage droop under the full
load condition.
Based on the desired loadline R LL , the loadline regulation
resistor can be calculated using Equation 33:
NR R
R FB = ----------------------------------
the current sense element, either the DCR of the inductor or
R SENSE depending on the sensing method, and I OCP is the
ISEN LL
R X
(EQ. 33)
∑ R ISEN ( n )
R X
desired overcurrent trip point. Typically, I OCP can be chosen
to be 1.2x the maximum load current of the specific
application.
With integrated temperature compensation, the sensed
current signal is independent on the operational temperature
of the power stage, i.e. the temperature effect on the current
sense element R X is cancelled by the integrated
temperature compensation function. R X in Equation 30
should be the resistance of the current sense element at the
room temperature.
When the integrated temperature compensation function is
disabled by pulling the TCOMP pin to GND, the sensed
current will be dependent on the operational temperature of
26
where N is the active channel number, R ISEN is the sense
resistor connected to the ISEN+ pin, and R X is the
resistance of the current sense element, either the DCR of
the inductor or R SENSE depending on the sensing method.
If one or more of the current sense resistors are adjusted for
thermal balance (as in Equation 31), the load-line regulation
resistor should be selected based on the average value of
the current sensing resistors, as given in Equation 34:
R LL
R FB = ---------- (EQ. 34)
n
where R ISEN(n) is the current sensing resistor connected to
the n th ISEN+ pin.
FN6839.2
September 7, 2010
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