参数资料
| 型号： | ISL6611AIRZ |
| 厂商： | Intersil |
| 文件页数： | 10/14页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR DOUBLER PWM 16-QFN |
| 标准包装： | 75 |
| PWM 型： | 控制器 |
| 输出数： | 2 |
| 频率 - 最大： | 1MHz |
| 电源电压： | 4.5 V ~ 5.5 V |
| 降压： | 无 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 是 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 包装： | 管件 |
ISL6611A
pins completes the bootstrap circuit. The ISL6611A’s internal
bootstrap resistor is designed to reduce the overcharging of
the bootstrap capacitor when exposed to excessively large
negative voltage swing at the PHASE node. Typically, such
large negative excursions occur in high current applications
that use D 2 -PAK and D-PAK MOSFETs or excessive layout
parasitic inductance. Equation 1 helps select a proper
bootstrap capacitor size:
maximum recommended operating junction temperature of
+125°C. The maximum allowable IC power dissipation for
the 4x4 QFN package, with an exposed heat escape pad, is
around 2W. See “Layout Considerations” on page 12 for
thermal transfer improvement suggestions. When designing
the driver into an application, it is recommended that the
following calculation is used to ensure safe operation at the
desired frequency for the selected MOSFETs. The total gate
C BOOT_CAP ≥ --------------------------------------
Q GATE
Δ V BOOT_CAP
(EQ. 1)
drive power losses due to the gate charge of MOSFETs and
the driver ’s internal circuitry and their corresponding average
driver current can be estimated with Equations 2 and 3,
Q GATE = ------------------------------------ ? N Q1
P Qg_Q1 = --------------------------------------- ? F SW ? N Q1
P Qg_Q2 = --------------------------------------- ? F SW ? N Q2
I DR = 2 ? ? ? ? F SW + I Q
Q G1 ? PVCC
V GS1
where Q G1 is the amount of gate charge per upper MOSFET
at V GS1 gate-source voltage and N Q1 is the number of
control MOSFETs. The Δ V BOOT_CAP term is defined as the
allowable droop in the rail of the upper gate drive.
As an example, suppose two HAT2168 FETs are chosen as
the upper MOSFETs. The gate charge, Q G , from the data
sheet is 12nC at 5V (V GS ) gate-source voltage. Then the
Q GATE is calculated to be 26.4nC at 5.5V PVCC level. We
will assume a 100mV droop in drive voltage over the PWM
respectively,
P Qg_TOT = 2 ? ( P Qg_Q1 + P Qg_Q2 ) + I Q ? VCC
Q G1 ? PVCC 2
V GS1
Q G2 ? PVCC 2
V GS2
? Q G1 ? N Q1 Q G2 ? N Q2 ?
------------------------------ + ------------------------------
? V GS1 V GS2 ?
(EQ. 2)
(EQ. 3)
cycle. We find that a bootstrap capacitance of at least
0.264μF is required. The next larger standard value
capacitance is 0.33μF. A good quality ceramic capacitor is
recommended.
2.0
1.8
1.6
where the gate charge (Q G1 and Q G2 ) is defined at a
particular gate to source voltage (V GS1 and V GS2 ) in the
corresponding MOSFET datasheet; I Q is the driver ’s total
quiescent current with no load at both drive outputs; N Q1
and N Q2 are number of upper and lower MOSFETs,
respectively. The factor 2 is the number of active channels.
The I Q V CC product is the quiescent power of the driver
without capacitive load.
1.4
The total gate drive power losses are dissipated among the
1.2
1.0
0.8
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
resistors (R G1 and R G2 , should be a short to avoid
0.6
0.4
0.2
20nC
Q GATE = 100nC
50nC
interfering with the operation shoot-through protection
circuitry) and the internal gate resistors (R GI1 and R GI2 ) of
MOSFETs. Figures 3 and 4 show the typical upper and lower
gate drives turn-on transition path. The power dissipation on
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
the driver can be roughly estimated as Equation 4:
P DR_UP = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI1 + R EXT1 R LO1 + R EXT1 ?
P DR_LOW = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI2 + R EXT2 R LO2 + R EXT2 ?
Δ V BOOT (V)
FIGURE 2. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency (F SW ), the output drive impedance, the
P DR = 2 ? ( P DR_UP + P DR_LOW ) + I Q ? VCC
? R HI1 R LO1 ? P Qg_Q1
? R HI2 R LO2 ? P Qg_Q2
2
2
(EQ. 4)
R EXT2 = R G1 + -------------
N
R EXT2 = R G2 + -------------
N
external gate resistance, and the selected MOSFET’s
internal gate resistance and total gate charge. Calculating
the power dissipation in the driver for a desired application is
critical to ensure safe operation. Exceeding the maximum
allowable power dissipation level will push the IC beyond the
10
R GI1
Q1
R GI2
Q2
FN6881.1
August 28, 2012
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相关代理商/技术参数 |
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| ISL6611AIRZ-T | 功能描述:IC REG CTRLR DOUBLER PWM 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
| ISL6612ACB | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6612ACB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6612ACBZ | 功能描述:IC DRIVER MOSFET SYNC BUCK 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:高端和低端，独立 输入类型:非反相 延迟时间:160ns 电流 - 峰:290mA 配置数:1 输出数:2 高端电压 - 最大（自引导启动）:600V 电源电压:10 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1381 (CN2011-ZH PDF) |
| ISL6612ACBZA | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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