参数资料
| 型号： | ISL6611AIRZ |
| 厂商： | Intersil |
| 文件页数： | 9/14页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR DOUBLER PWM 16-QFN |
| 标准包装： | 75 |
| PWM 型： | 控制器 |
| 输出数： | 2 |
| 频率 - 最大： | 1MHz |
| 电源电压： | 4.5 V ~ 5.5 V |
| 降压： | 无 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 是 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 包装： | 管件 |
ISL6611A
Timing Diagram
2.5V
PWM
t PDHU
t PDLU
t TSSHD
UGATE
LGATE
1V
t RU
1V
t RL
t PTS
t TSSHD
t RU
t FU
t PTS
t PDLL
t PDHL
t FL
FIGURE 1. TIMING DIAGRAM
Operation and Adaptive Shoot-Through Protection
Designed for high speed switching, the ISL6611A MOSFET
driver controls two-phase power trains’ high-side and low-side
N-Channel FETs from one externally provided PWM signal.
A rising transition on PWM initiates the turn-off of the lower
MOSFET (see Figure 1). After a short propagation delay
[t PDLL ], the lower gate begins to fall. Typical fall times [t FL ]
Adaptive shoot-through circuitry monitors the LGATE voltage
and turns on the upper gate following a short delay time
[t PDHU ] after the LGATE voltage drops below ~1V. The
upper gate drive then begins to rise [t RU ] and the upper
MOSFET turns on.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. The upper
gate begins to fall [t FU ] after a propagation delay [t PDLU ],
which is modulated by the current balance circuits. The
adaptive shoot-through circuitry monitors the UGATE-PHASE
voltage and turns on the lower MOSFET a short delay time,
t PDHL , after the upper MOSFET’s gate voltage drops below
1V. The lower gate then rises [t RL ], turning on the lower
MOSFET. These methods prevent both the lower and upper
MOSFETs from conducting simultaneously (shoot-through),
while adapting the dead time to the gate charge
characteristics of the MOSFETs being used.
This driver is optimized for voltage regulators with large step
down ratio. The lower MOSFET is usually sized larger
compared to the upper MOSFET because the lower
MOSFET conducts for a longer time during a switching
period. The lower gate driver is therefore sized much larger
to meet this application requirement. The 0.4 Ω
9
ON-resistance and 4A sink current capability enable the
lower gate driver to absorb the current injected into the lower
gate through the drain-to-gate capacitor (C GD ) of the lower
MOSFET and help prevent shoot through caused by the self
turn-on of the lower MOSFET due to high dV/dt of the
switching node.
Tri-State PWM Input
A unique feature of the ISL6611A is the adaptable tri-state
PWM input. Once the PWM signal enters the shutdown
window, either MOSFET previously conducting is turned off.
If the PWM signal remains within the shutdown window for
longer than 25ns of the previously conducting MOSFET, the
output drivers are disabled and both MOSFET gates are
pulled and held low. The shutdown state is removed when
the PWM signal moves outside the shutdown window. The
PWM Tri-state rising and falling thresholds outlined in the
“Electrical Specifications” on page 8 determine when the
lower and upper gates are enabled. During normal operation
in a typical application, the PWM rise and fall times through
the shutdown window should not exceed either output’s
turn-off propagation delay plus the MOSFET gate discharge
time to ~1V. Abnormally long PWM signal transition times
through the shutdown window will simply introduce
additional dead time between turn off and turn on of the
synchronous bridge’s MOSFETs. For optimal performance,
no more than 100pF parasitic capacitive load should be
present on the PWM line of ISL6611A (assuming an Intersil
PWM controller is used).
Bootstrap Considerations
This driver features an internal bootstrap diode. Simply
adding an external capacitor across the BOOT and PHASE
FN6881.1
August 28, 2012
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| ISL6611AIRZ-T | 功能描述:IC REG CTRLR DOUBLER PWM 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
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