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参数资料
| 型号： | IXEN60N120D1 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT3 1200V 100A SOT-227B |
| 产品目录绘图： | SOT-227, SOT-227B miniBLOC |
| 标准包装： | 10 |
| IGBT 类型： | NPT |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，60A |
| 电流 - 集电极 (Ic)（最大）： | 100A |
| 电流 - 集电极截止（最大）： | 800µA |
| Vce 时的输入电容 (Cies)： | 3.8nF @ 25V |
| 功率 - 最大： | 445W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
IXEN 60N120
IXEN 60N120D1
NPT 3 IGBT
in miniBLOC package
I C25
V CES
= 100 A
= 1200 V
V CE(sat) typ. = 2.1 V
G
C
G
C
miniBLOC, SOT-227 B
E153432 G
E
E
IXEN 60N120
E
IXEN 60N120D1
C = Collector
G = Gate
E = Emitter *
C
E
* Either Emitter terminal can be used as Main or Kelvin Emitter
IGBT
Features
? NPT 3 IGBT
Symbol
Conditions
Maximum Ratings
- low saturation voltage
V CES
V GES
I C25
I C90
I CM
V CEK
t SC
(SCSOA)
P tot
T VJ = 25°C to 150°C
T C = 25°C
T C = 90°C
V GE = ± 15 V; R G = 22 ? ; T VJ = 125°C
RBSOA, Clamped inductive load; L = 100 μH
V CE = 900 V; V GE = ± 15 V; R G = 22 ? ; T VJ = 125°C
non-repetitive
T C = 25°C
1200
± 20
100
65
100
V CES
10
445
V
V
A
A
A
μs
W
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
? optional HiPerFRED TM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
? miniBLOC package
- isolated copper base plate
- screw terminals
- kelvin emitter terminal for easy drive
- industry standard outline
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? single switches
V CE(sat)
V GE(th)
I CES
I GES
I C = 60 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 2 mA; V GE = V CE
V CE = V CES ; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
V CE = 0 V; V GE = ± 20 V
4.5
2.1
2.5
0.8
2.7
6.5
0.8
200
V
V
V
mA
mA
nA
? choppers with complementary free
wheeling diode
? phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
t d(on)
80
ns
t r
t d(off)
t f
E on
E off
C ies
Q Gon
Inductive load, T VJ = 125°C
V CE = 600 V; I C = 60 A
V GE = ±15 V; R G = 22 ?
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600 V; V GE = 15 V; I C = 50 A
50
680
30
7.2
4.8
3.8
350
ns
ns
ns
mJ
mJ
nF
nC
R thJC
? 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
0.28 K/W
1-4
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
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