参数资料
型号: IXFA230N075T2-7
厂商: IXYS
文件页数: 2/6页
文件大小: 0K
描述: MOSFET N-CH 75V 230A TO-263-7
标准包装: 50
系列: *
IXFA230N075T2-7
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-263 (7-lead) (IXFA..7) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
50
85
10.5
1165
125
23
18
33
15
178
53
41
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31 ° C/W
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
Souce-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse width limited by T JM
I F = 100A, V GS = 0V, Note 1
I F = 115A, V GS = 0V
-di/dt = 100A/ μ s
V R = 37V
59
3.6
106
230
900
1.3
A
A
V
ns
A
nC
Notes: 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5mm or less from the package body.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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