- 您现在的位置：买卖IC网 > Datasheet目录453 > IXFK27N80 (IXYS)MOSFET N-CH 800V 27A TO-264AA Datasheet资料下载
参数资料
| 型号： | IXFK27N80 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 27A TO-264AA |
| 产品目录绘图： | TO-264(AA) Package |
| 标准包装： | 25 |
| 系列： | HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 27A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 13.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 8mA |
| 闸电荷(Qg) @ Vgs： | 400nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9740pF @ 25V |
| 功率 - 最大： | 500W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264AA |
| 包装： | 管件 |
Not for New Designs
V DSS
I D25
R DS(on)
HiPerFET TM Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
IXFK
IXFK
IXFN
IXFN
27N80
25N80
27N80
25N80
800
800
800
800
V
V
V
V
27 A
25 A
27 A
25 A
0.30
0.35
0.30
0.35
?
?
?
?
TO-264 AA (IXFK)
Symbol
Test Conditions
Maximum Ratings
IXFK IXFN
V DSS
T J = 25 ° C to 150 ° C
800
800
V
V DGR
V GS
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
800
± 20
800
± 20
V
V
G
D
S
(TAB)
V GSM
I D25
I DM
Transient
T C = 25 ° C, Chip capability
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
± 30
27N80 27
25N80 25
27N80 108
25N80 100
± 30
27
25
108
100
V
A
A
A
A
miniBLOC, SOT-227 B (IXFN)
E153432
S
D G
I AR
27N80 14
25N80 13
14
13
A
A
G
S
E AR
T C = 25 ° C
30
30
mJ
S
S
D
dv/dt
P D
T J
T JM
T stg
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
5 5
500 520
-55 ... +150
150
-55 ... +150
V/ns
W
° C
° C
° C
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
T L
1.6 mm (0.063 in) from case for 10 s
300
-
° C
?
International standard packages
V ISOL
50/60 Hz, RMS
I ISOL ≤ 1 mA
t = 1 min
t=1s
-
-
2500
3000
V~
V~
?
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
M d
Mounting torque
Terminal connection torque
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
?
?
miniBLOC, with Aluminium nitride
isolation
Low R DS (on) HDMOS TM process
Weight
10
30
g
?
Rugged polysilicon gate cell structure
?
Unclamped Inductive Switching (UIS)
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
?
?
rated
Low package inductance
Fast intrinsic Rectifier
V DSS
V GS = 0 V, I D = 3 mA
800
V
Applications
V DSS temperature coefficient
0.096
%/K
?
DC-DC converters
V GH(th)
V DS = V GS , I D = 8 mA
V GS(th) temperature coefficient
2
-0.214
4.5
V
%/K
?
?
Battery chargers
Switched-mode and resonant-mode
power supplies
I GSS
I DSS
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
± 200
500
2
nA
μ A
mA
? DC choppers
? Temperature and lighting controls
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ≤ 300 μ s,
duty cycle d ≤ 2 %
25N80
27N80
0.35
0.30
?
?
?
?
?
Easy to mount
Space savings
High power density
? 2002 IXYS All rights reserved
95561D(6/02)
相关PDF资料 |
PDF描述 |
|---|---|
| IXFK30N110P | MOSFET N-CH 1100V 30A TO-264 |
| IXFK320N17T2 | MOSFET N-CH 170V 320A TO264 |
| IXFK32N100P | MOSFET N-CH 1000V 32A TO-264 |
| IXFK32N50Q | MOSFET N-CH 500V 32A TO-264 |
| IXFK32N80P | MOSFET N-CH 800V 32A TO-264 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXFK27N80Q | 功能描述:MOSFET 27 Amps 800V 0.32 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFK27N80Q_02 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-CLASS |
| IXFK28N60 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFK30N100Q2 | 功能描述:MOSFET 30 Amps 1000V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFK30N100Q2_08 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q2-Class |
发布紧急采购，3分钟左右您将得到回复。