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参数资料
| 型号： | IXFX26N120P |
| 厂商： | IXYS CORP |
| 元件分类： | JFETs |
| 英文描述： | 26 A, 1200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLUS247, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 116K |
| 代理商： | IXFX26N120P |
2008 IXYS CORPORATION, All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
1200
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
1200
V
V
GSS
Continuous
± 30
V
V
GSM
Transient
± 40
V
I
D25
T
C = 25°C26
A
I
DM
T
C = 25°C, pulse width limited by TJM
60
A
I
A
T
C = 25°C13
A
E
AS
T
C = 25°C
1.5
J
dV/dt
I
S
≤ I
DM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
P
D
T
C = 25°C
960
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10s
300
°C
T
SOLD
Plastic body for 10s
260
°C
M
d
Mounting torque
(IXFK)
1.13/10
Nm/lb.in.
F
C
Mounting force
(IXFX)
20..120 /4.5..27
N/lb
Weight
TO-264
10
g
PLUS247
6
g
G = Gate
D = Drain
S = Source
TAB = Drain
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 3mA
1200
V
V
GS(th)
V
DS = VGS, ID = 1mA
3.5
6.5
V
I
GSS
V
GS = ± 30V, VDS = 0V
± 200
nA
I
DSS
V
DS = VDSS
50
μA
V
GS = 0V
T
J = 125°C
5
mA
R
DS(on)
V
GS = 10V, ID = 0.5 ID25, Note 1
460
m
Ω
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features:
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages:
Easy to mount
Space savings
High power density
IXFK26N120P
IXFX26N120P
V
DSS
= 1200V
I
D25
= 26A
R
DS(on) ≤
≤≤≤≤ 460m
Ω
t
rr
≤≤≤≤≤ 300ns
DS99740G (04/08)
PLUS247 (IXFX)
TO-264 (IXFK)
S
G
D
(TAB)
Applications:
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
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