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参数资料
| 型号： | IXFX26N120P |
| 厂商： | IXYS CORP |
| 元件分类： | JFETs |
| 英文描述： | 26 A, 1200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLUS247, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 116K |
| 代理商： | IXFX26N120P |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK26N120P
IXFX26N120P
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 20V, ID = 0.5 ID25, Note 1
13
21
S
C
iss
14
nF
C
oss
V
GS = 0V, VDS = 25V, f = 1 MHz
725
pF
C
rss
50
pF
R
Gi
Gate input resistance
1.5
Ω
t
d(on)
56
ns
t
r
55
ns
t
d(off)
76
ns
t
f
58
ns
Q
g(on)
225
nC
Q
gs
V
GS= 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
87
nC
Q
gd
98
nC
R
thJC
0.13
°C/W
R
thCS
0.15
°C/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS = 0V
26
A
I
SM
Repetitive, pulse width limited by T
JM
104
A
V
SD
I
F = IS, VGS = 0V, Note 1
1.5
V
t
rr
300
ns
Q
RM
1.3
μC
I
RM
12
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXFX) Outline
TO-264 (IXFK) Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81
20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190
I
F = 13A, -di/dt = 100A/μs
V
R = 100V, VGS = 0V
Resistive Switching Times
V
GS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
R
G
= 1
Ω (External)
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