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| 型号： | IXTC280N055T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 145A ISOPLUS220 |
| 产品目录绘图： | ISOPLUS220 |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 145A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.6 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 200nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9800pF @ 25V |
| 功率 - 最大： | 160W |
| 安装类型： | 通孔 |
| 封装/外壳： | ISOPLUS220? |
| 供应商设备封装： | ISOPLUS220? |
| 包装： | 管件 |
IXTC280N055T
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
ISOPLUS220 (IXTC) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 50 A
65
108
9800
1450
320
32
55
S
pF
pF
pF
ns
ns
t d(off)
t f
Q g(on)
Q gs
Q gd
R G = 3.3 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
49
37
200
50
50
ns
ns
nC
nC
nC
1.Gate 2. Drain
3.Sourc e
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1,2, and 3.
R thJC
0.96 ° C/W
R thCS
0.5
° C/W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 50 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
30
280
600
1.0
A
A
V
ns
V R = 30 V, V GS = 0 V
Notes: 1. Pulse test: t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
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