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参数资料
| 型号： | IXTH500N04T2 |
| 厂商： | IXYS |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 500A TO-247 |
| 标准包装： | 30 |
| 系列： | TrenchT2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 500A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 405nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 25000pF @ 25V |
| 功率 - 最大： | 1000W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
IXTH500N04T2
IXTT500N04T2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
C iss
V DS = 10V, I D = 60A, Note 1
75
125
25
S
nF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
4410
pF
1
2
3
?P
C rss
970
pF
R Gi
Gate Input Resistance
1.1
Ω
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCH
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 200A
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
TO-247
37
16
68
44
405
105
118
0.21
ns
ns
ns
ns
nC
nC
nC
0.15 ° C/W
° C/W
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
.610 .640
Source-Drain Diode
e 5.20 5.72
L 19.81 20.32
0.205 0.225
.780 .800
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.177
.140 .144
0.232 0.252
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 100A, V GS = 0V, Note 1
I F = 100A, V GS = 0V
-di/dt = 100A/ μ s
V R = 20V
84
3.1
130
500
1500
1.2
A
A
V
ns
A
nC
R 4.32 5.49
S 6.15 BSC
TO-268 (IXTT) Outline
.170 .216
242 BSC
Notes:
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2. Includes lead resistance.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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