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| 型号： | IXTV03N400S |
| 厂商： | IXYS |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 4000V .3A PLUS 220 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 4000V（4kV） |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 290 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 25V |
| 功率 - 最大： | 130W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PLUS-220SMD |
| 供应商设备封装： | PLUS-220SMD |
IXTH03N400
IXTV03N400S
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 Outline
g fs
V DS = 50V, I D = 100mA, Note 1
110
180
mS
C iss
C oss
C rss
V GS = 0V, V DS = 25V, f = 1MHz
435
19
6
pF
pF
pF
1
2
3
?P
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 250V, I D = 150mA
R G = 50 Ω (External)
17
16
86
58
ns
ns
ns
ns
e
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 1000V, I D = 0.5 ? I D25
16.3
1.9
8.8
0.25
nC
nC
nC
0.96 ° C/W
° C/W
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
Source-Drain Diode
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
.065 .084
.113 .123
.016 .031
.819 .845
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
I S
I SM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
300 mA
1.2 A
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.177
.140 .144
0.232 0.252
.170 .216
V SD
t rr
I F = 300mA, V GS = 0V, Note 1
I F = 1A, -di/dt = 100A / μ s, V R = 200V
2.8
3.0
V
μ s
S 6.15 BSC
PLUS220SMD Outline
242 BSC
Note:
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Additional provisions for lead to lead voltage isolation are required at V DS > 1200V.
1. Gate
2,4. Drain
3. Source
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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