参数资料
型号: JANTX2N2944A
英文描述: TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 100MA I(C) | TO-46
中文描述: 晶体管|晶体管|进步党| 10V的五(巴西)总裁| 100mA的一(c)|的TO - 46
文件页数: 11/21页
文件大小: 137K
代理商: JANTX2N2944A
MIL-PRF-19500/368F
19
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a.
Title, number, and date of this specification.
b.
Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c.
Packaging requirements (see 5.1).
d.
Lead finish (see 3.4.1).
e.
Type designation and quality assurance level.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center Columbus, ATTN: DSCC/VQE, P. O. Box 3990, Columbus, OH 43216-5000.
相关PDF资料
PDF描述
JANTX2N2945A TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 100MA I(C) | TO-46
JANTX2N2946A TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-46
JANTX2N3250A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
JANTX2N3251A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
JANTX2N3418 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5
相关代理商/技术参数
参数描述
JANTX2N2945 制造商: 功能描述: 制造商:Honeywell Sensing and Control 功能描述: 制造商:undefined 功能描述:
JANTX2N2945A 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 20V 0.1A 3PIN TO-46 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP 20V 100MA 400MW TO-46 制造商:Microsemi 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46
JANTX2N2946A 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46
JANTX2N3019 功能描述:两极晶体管 - BJT JANTX2N3019 RoHS:否 制造商:ON Semiconductor 配置:Single 晶体管极性:NPN 集电极—基极电压 VCBO:140 VDC 集电极—发射极最大电压 VCEO:80 VDC 发射极 - 基极电压 VEBO:7 VDC 集电极—射极饱和电压:0.2 V 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:15 mA 最大工作温度:+ 200 C 安装风格:Through Hole 封装 / 箱体:TO-5
JANTX2N3019S 功能描述:两极晶体管 - BJT JANTX2N3019S RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2