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参数资料
| 型号： | JANTX2N3250A |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| 中文描述： | 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 200mA的一（c）|到18 |
| 文件页数： | 1/21页 |
| 文件大小： | 137K |
| 代理商： | JANTX2N3250A |
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX2N3251A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JANTX2N3418 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N3418S | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) |
| JANTX2N3419 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N3419S | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX2N3251A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JANTX2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/323 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:200mA 电压 - 集射极击穿（最大值）:60V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 5mA，50mA 电流 - 集电极截止（最大值）:10μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:3-SMD，无引线 供应商器件封装:UB 标准包装:1 |
| JANTX2N3330 | 制造商:Motorola Inc 功能描述: |
| JANTX2N3375 | 制造商:MOTOROLA 功能描述:DIODE |
| JANTX2N3418 | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 3A 3PIN TO-5 - Bulk |
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