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参数资料
| 型号： | JANTX2N3250A |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| 中文描述： | 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 200mA的一（c）|到18 |
| 文件页数： | 19/21页 |
| 文件大小： | 137K |
| 代理商： | JANTX2N3250A |
MIL-PRF-19500/368F
7
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
A
.061
.075
1.55
1.90
3
A1
.029
.041
0.74
1.04
B1
.022
.028
0.56
0.71
B2
.075 REF
1.91 REF
B3
.006
.022
0.15
0.56
5
D
.145
.155
3.68
3.93
D1
.045
.055
1.14
1.39
D2
.0375 BSC
.952 BSC
D3
.155
3.93
E
.215
.225
5.46
5.71
E3
.225
5.71
L1
.032
.048
0.81
1.22
L2
.072
.088
1.83
2.23
L3
.003
.007
0.08
0.18
5
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the
drawing.
5. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an unobstructed
three-dimensional space traversing all of the ceramic layers in which a castellation was designed.
(Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "B3" maximum
and "L3" maximum define the maximum width and depth of the castellation at any point on its surface.
Measurement of these dimensions may be made prior to solder dipping.
* FIGURE 4. Physical dimensions, surface mount (2N3439UA, 2N3440UA) version.
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PDF描述 |
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| JANTX2N3251A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JANTX2N3418 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N3418S | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX2N3251A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JANTX2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/323 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:200mA 电压 - 集射极击穿（最大值）:60V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 5mA，50mA 电流 - 集电极截止（最大值）:10μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:3-SMD，无引线 供应商器件封装:UB 标准包装:1 |
| JANTX2N3330 | 制造商:Motorola Inc 功能描述: |
| JANTX2N3375 | 制造商:MOTOROLA 功能描述:DIODE |
| JANTX2N3418 | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 3A 3PIN TO-5 - Bulk |
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