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参数资料
| 型号： | JANTX2N3250A |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| 中文描述： | 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 200mA的一（c）|到18 |
| 文件页数： | 16/21页 |
| 文件大小： | 137K |
| 代理商： | JANTX2N3250A |
MIL-PRF-19500/368F
4
Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LD
.016
.021
0.41
0.53
3, 10
LL
See notes 10, 12, and 13
L1
.050
1.27
11
LU
.016
.019
0.41
0.48
4, 10
M
.1414 Nom
3.591 Nom
7
N
.0707 Nom
1.796 Nom
7
P
.100
2.54
5
Q
6
TL
.029
.045
0.74
1.14
9
TW
.028
.034
0.71
0.86
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane.
4. Measured in the zone .50 inch (1.27 mm) from the seating plane.
5. Variations on dimension CD in this zone shall not exceed .010 inch (0.25 mm).
6. Outline in this zone is not controlled.
7. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, - 0.00 mm) below the seating plane of
the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a
maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead
tolerance.
8. The collector shall be electrically connected to the case.
9. Measured from the maximum diameter of the actual device.
10. All three leads (see 3.4.1).
11. Diameter of leads in this zone is not controlled.
12. For transistor types 2N3439 and 2N3440, L = .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum.
13. For transistor types 2N3439L and 2N3440L, L = 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum.
FIGURE 1. Physical dimensions - Continued.
相关PDF资料 |
PDF描述 |
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| JANTX2N3251A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JANTX2N3418 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N3418S | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) |
| JANTX2N3419 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N3419S | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX2N3251A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JANTX2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/323 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:200mA 电压 - 集射极击穿（最大值）:60V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 5mA，50mA 电流 - 集电极截止（最大值）:10μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:3-SMD，无引线 供应商器件封装:UB 标准包装:1 |
| JANTX2N3330 | 制造商:Motorola Inc 功能描述: |
| JANTX2N3375 | 制造商:MOTOROLA 功能描述:DIODE |
| JANTX2N3418 | 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 3A 3PIN TO-5 - Bulk |
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