参数资料
型号: JANTX2N3250A
英文描述: TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
中文描述: 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 200mA的一(c)|到18
文件页数: 6/21页
文件大小: 137K
代理商: JANTX2N3250A
MIL-PRF-19500/368F
14
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Collector to base cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3036
Bias condition D
VCB = 450 V dc
VCB = 300 V dc
ICBO2
5
A dc
Base emitter voltage
(nonsaturated)
3066
Test condition A, pulsed (see 4.5.1),
IC = 50 mA dc, IB = 4 mA dc
VBE(sat)
1.3
V dc
Collector to emitter voltage
(saturated)
3071
Pulsed (see 4.5.1), IC = 50 mA dc,
IB = 4 mA dc
VCE(sat)
0.5
V dc
Forward-current transfer
ratio
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 20 mA
hFE1
40
160
Forward-current transfer
ratio
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 2 mA
hFE2
30
Forward-current transfer
ratio
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 0.2 mA
hFE3
10
Subgroup 3
High temperature
operation:
TA = +150°C
Collector to emitter cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3036
Bias condition D
VCB = 360 V dc
VCB = 250 V dc
ICB03
100
A dc
Low temperature operation:
TA = -55
°C
Forward-current transfer ratio
3076
VCE = 10 V dc, IC = 20 mA dc,
pulsed (see 4.5.1)
hFE4
15
Subgroup 4
Pulse response:
3251
Test condition A
Turn-on time
VCC = 200 V dc, IC = 20 mA dc,
IB1 = 2 mA dc, see figure 5
ton
1
s
Turn-off time
VCC = 200 V dc, IC = 20 mA dc,
IB1 = -IB2 = 2 mA dc, see figure 5
toff
10
s
See footnotes at end of table.
相关PDF资料
PDF描述
JANTX2N3251A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
JANTX2N3418 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5
JANTX2N3418S TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C)
JANTX2N3419 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-5
JANTX2N3419S TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39
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