参数资料
型号: JANTX2N3250A
英文描述: TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
中文描述: 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 200mA的一(c)|到18
文件页数: 7/21页
文件大小: 137K
代理商: JANTX2N3250A
MIL-PRF-19500/368F
15
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 4 - Continued
Magnitude of common- emitter
small-signal short-circuit forward-
current transfer ratio
3306
VCE = 10 V dc, IC = 10 mA dc,
f = 5 MHz
|hfe|
3
15
Open capacitance input open
circuited
3236
VCB = 10 V dc, IE = 0,
100 kHz
≤ f ≤ 1 MH
Cobo
10
pF
Small-signal short- circuit forward-
current transfer ratio
3206
VCE = 10 V dc, IC = 5 mA,
f = 1 kHz
hfe
25
Input capacitance (output open
circuited)
3240
VCB = 5 V dc, IE = 0,
100 kHz
≤ f ≤ 1 MHz
Cibo
75
Subgroup 5
Safe operating area (continuous dc)
3051
(See figure 6) TC = +25°C, 1 cycle,
t = 1.0 s.
Test 1
VCE = 5 V dc, IC = 1 A dc
Test 2
Only 2N3439, 2N3439L, 2N3439UA
VCE = 350 V dc, IC = 14 mA dc
Test 3
Only 2N3440, 2N3440L, 2N3440UA
Electrical measurements
VCE = 250 V dc, IC = 20 mA dc
See table I, subgroup 2 and 4.5.3
herein.
Breakdown voltage, collector to
emitter
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3011
IC = 10 mA, RBB1 = 470 ohms
VBB1 = 6 V, L = 25 mH minimum
f = 30 to 60 Hz
VBR(CEO)
350
250
V dc
1/ For sampling plan, see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests.
3/ Separate samples may be used.
4/ Not required for JANS.
5/ Not required for laser marked devices.
相关PDF资料
PDF描述
JANTX2N3251A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
JANTX2N3418 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5
JANTX2N3418S TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C)
JANTX2N3419 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-5
JANTX2N3419S TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39
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