- 您现在的位置：买卖IC网 > PDF目录299235 > JANTX2N2944A TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 100MA I(C) | TO-46 PDF资料下载
参数资料
| 型号： | JANTX2N2944A |
| 英文描述： | TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 100MA I(C) | TO-46 |
| 中文描述： | 晶体管|晶体管|进步党| 10V的五（巴西）总裁| 100mA的一（c）|的TO - 46 |
| 文件页数： | 3/21页 |
| 文件大小： | 137K |
| 代理商： | JANTX2N2944A |
MIL-PRF-19500/368F
11
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Condition
1
1039
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall be applied to
achieve TJ = +150
°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production, however,
group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0.
3
1032
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or
from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection
lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed table I, group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in
accordance with table I, group A, subgroup 2 and 4.5.3 herein.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E, except the UA package.
C6
1026
1,000 hours at VCB = 10 V dc; power shall be applied to achieve
TJ = +150
°C minimum and a minimum of PD = 75 percent of maximum
rated PT as defined in 1.3.
* 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E.
C5
3131
See 4.5.2.
C6
Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot
containing the intended package type and lead finish procured to the same specification which is submitted to and
passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the
intended package type shall be considered as complying with the requirements for that subgroup.
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX2N2945A | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 100MA I(C) | TO-46 |
| JANTX2N2946A | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-46 |
| JANTX2N3250A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JANTX2N3251A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JANTX2N3418 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX2N2945 | 制造商: 功能描述: 制造商:Honeywell Sensing and Control 功能描述: 制造商:undefined 功能描述: |
| JANTX2N2945A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 20V 0.1A 3PIN TO-46 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP 20V 100MA 400MW TO-46 制造商:Microsemi 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46 |
| JANTX2N2946A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 |
| JANTX2N3019 | 功能描述:两极晶体管 - BJT JANTX2N3019 RoHS:否 制造商:ON Semiconductor 配置:Single 晶体管极性:NPN 集电极—基极电压 VCBO:140 VDC 集电极—发射极最大电压 VCEO:80 VDC 发射极 - 基极电压 VEBO:7 VDC 集电极—射极饱和电压:0.2 V 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:15 mA 最大工作温度:+ 200 C 安装风格:Through Hole 封装 / 箱体:TO-5 |
| JANTX2N3019S | 功能描述:两极晶体管 - BJT JANTX2N3019S RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。