- 您现在的位置：买卖IC网 > PDF目录299235 > JANTX2N2944A TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 100MA I(C) | TO-46 PDF资料下载
参数资料
| 型号： | JANTX2N2944A |
| 英文描述： | TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 100MA I(C) | TO-46 |
| 中文描述： | 晶体管|晶体管|进步党| 10V的五（巴西）总裁| 100mA的一（c）|的TO - 46 |
| 文件页数： | 14/21页 |
| 文件大小： | 137K |
| 代理商： | JANTX2N2944A |
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/368F
2. DOCUMENT DATE
8 July 2002
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES: 2N3439, 2N3439L,
2N3439UA, 2N3440, 2N3440L, AND 2N3440UA, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
b. TELEPHONE
Commercial
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus,
ATTN: DSCC-VAC
P.O. Box 3990
Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888
DSN 427-6888
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX2N2945A | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 100MA I(C) | TO-46 |
| JANTX2N2946A | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-46 |
| JANTX2N3250A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JANTX2N3251A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 |
| JANTX2N3418 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX2N2945 | 制造商: 功能描述: 制造商:Honeywell Sensing and Control 功能描述: 制造商:undefined 功能描述: |
| JANTX2N2945A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 20V 0.1A 3PIN TO-46 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP 20V 100MA 400MW TO-46 制造商:Microsemi 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46 |
| JANTX2N2946A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 |
| JANTX2N3019 | 功能描述:两极晶体管 - BJT JANTX2N3019 RoHS:否 制造商:ON Semiconductor 配置:Single 晶体管极性:NPN 集电极—基极电压 VCBO:140 VDC 集电极—发射极最大电压 VCEO:80 VDC 发射极 - 基极电压 VEBO:7 VDC 集电极—射极饱和电压:0.2 V 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:15 mA 最大工作温度:+ 200 C 安装风格:Through Hole 封装 / 箱体:TO-5 |
| JANTX2N3019S | 功能描述:两极晶体管 - BJT JANTX2N3019S RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。