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参数资料
| 型号： | L6740L |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PQFP48 |
| 封装： | 7 X 7 MM, 1 MM HEIGHT, HTQFP-48 |
| 文件页数： | 33/44页 |
| 文件大小： | 755K |
| 代理商： | L6740L |
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L6740L
LTB Technology
10
LTB Technology
LTB Technology further enhances the performances of dual-edge asynchronous systems
by reducing the system latencies and immediately turning ON all the phases to provide the
correct amount of energy to the load. By properly designing the LTB network as well as the
LTB gain, the undershoot and the ring-back can be minimized also optimizing the output
capacitors count. LTB Technology applies only to the CORE section.
LTB Technology monitors the output voltage through a dedicated pin detecting Load-
Transients with selected dV/dt, it cancels the interleaved phase-shift, turning-on
simultaneously all phases. it then implements a parallel, independent loop that reacts to
load-transients bypassing E/A latencies.
LTB Technology control loop is reported in Figure 18.
Figure 18.
LTB Technology control loop (CORE section)
The LTB detector is able to detect output load transients by coupling the output voltage
through an RLTB - CLTB network. After detecting a load transient, the LTB Ramp is reset and
then compared with the COMP pin level. The resulting duty-cycle programmed is then OR-
ed with the PWMx signal of each phase by-passing the main control loop. All the phases will
then be turned-on together and the EA latencies results bypassed as well.
Sensitivity of the load transient detector and the gain of the LTB Ramp can be programmed
in order to control precisely both the undershoot and the ring-back.
●
Detector design. RLTB - CLTB is design according to the output voltage deviation dVOUT
which is desired the controller to be sensitive as follow:
Ref
FB
COMP
VSEN
FBG
R
F
C
F
R
FB
DROOP
PWM
L/N
ESR
CO
R
O
d VCOMP
VOUT
ZF(s)
ZFB(s)
VID
V
COMP
C
H
C
FB
LT
B
I DR
OOP
Monitor
RLTB
CLTB
PWM_BOOST
LTB Ramp
LTB
LT Detect
R
LTB
dV
OUT
25
μA
------------------
=
C
LTB
1
2
π NR
LTB
F
SW
--------------------------------------------------
=
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相关代理商/技术参数 |
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| L6740LTR | 功能描述:DC/DC 开关控制器 Hybrid controller RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| L6741 | 功能描述:功率驱动器IC SnglPphase Dual MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6741TR | 功能描述:功率驱动器IC SnglPphase Dual MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6743 | 功能描述:功率驱动器IC SnglPphase Dual MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6743_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High current MOSFET driver |
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