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| 型号： | LM5051MAX/NOPB |
| 厂商： | National Semiconductor |
| 文件页数： | 7/23页 |
| 文件大小： | 0K |
| 描述： | IC ORING FET CTRLR 8SOIC |
| 标准包装： | 2,500 |
| 应用： | 冗余电源 |
| FET 型： | N 沟道 |
| 输出数： | 1 |
| 内部开关： | 无 |
| 电源电压： | 36 V ~ 100 V |
| 电流 - 电源： | 400µA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
SNVS702D – OCTOBER 2011 – REVISED MARCH 2013
Typical Performance Characteristics
Unless otherwise stated: All conditions and measurements are referenced to device pin 7 (INP/VSS), V LINE = 48V, V OFF =
0.0V, V INN = -150 mV, C VCC = 0.1 μF, C GATE = 47 nF, and T J = 25°C
Gate Charge Time, C GATE = 47 nF
GATE Discharge Time, t GATE(REV) , C GATE = 47 nF
14
12
10
8
6
4
2
0
-2
INN
INP/VSS
GATE
14
12
10
8
6
4
2
0
-2
INN
INP/VSS
GATE
-1
0
1 2
3
4
-50
0
50
100 150
200
250
TIME (ms)
Figure 8.
I GATE Discharge Current
vs
Temperature, V GATE = 5.5V
TIME (ns)
Figure 9.
Gate Discharge Time
vs
Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
200
180
160
140
120
100
80
60
40
20
0
Cgate = 47 nF
Cgate = 10 nF
-50
-25
0 25 50 75
100 125
-50
-25
0 25 50 75
100 125
TEMPERATURE (°C)
Figure 10.
Gate Discharge Time
vs
C GATE
TEMPERATURE (°C)
Figure 11.
I GATE Charge Current
vs
Temperature, V GATE = 5.5V
200
180
160
140
120
100
80
60
40
20
0
+125°C
+25°C
-40°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
10 20 30 40
50
-50
-25
0 25 50 75
100 125
GATE CAPACITANCE, CGATE(nF)
Figure 12.
TEMPERATURE (°C)
Figure 13.
Copyright ? 2011–2013, Texas Instruments Incorporated
Product Folder Links: LM5051
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