参数资料
| 型号： | LTC3831EGN |
| 厂商： | Linear Technology |
| 文件页数： | 14/20页 |
| 文件大小： | 0K |
| 描述： | IC SW REG CONTROLLR SYNC 16-SSOP |
| 标准包装： | 100 |
| 应用： | 控制器，DDR |
| 输入电压： | 3 V ~ 8 V |
| 输出数： | 1 |
| 输出电压： | 1.27 V ~ 4 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SSOP（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SSOP |
| 包装： | 管件 |
| 产品目录页面： | 1336 (CN2011-ZH PDF) |
LTC3831
APPLICATIONS INFORMATION
output might allow no more than 3% ef?ciency loss at full
load for each MOSFET. Assuming roughly 90% ef?ciency
at this current level, this gives a P MAX value of:
(1.25V)(5A/0.9)(0.03) = 0.21W per FET
and a required R DS(ON) of:
higher P MAX value in the R DS(ON) calculations generally
decreases the MOSFET cost and the circuit ef?ciency and
increases the MOSFET heat sink requirements.
Table 1 highlights a variety of power MOSFETs that are
for use in LTC3831 applications.
(1.25V)(5A)
R DS(ON)Q1 =
(2.5V) ? (0.21W)
2
= 0.017 Ω
Inductor Selection
The inductor is often the largest component in an LTC3831
R DS(ON)Q2 =
(2.5V) ? (0.21W)
(2.5V – 1.25V)(5A) 2
= 0.017 Ω
design and must be chosen carefully. Choose the inductor
value and type based on output slew rate requirements.
The maximum rate of rise of inductor current is set by
DC MAX ? (V IN – V OUT ) 1.138 A
NotethatwhiletherequiredR DS(ON) valuessuggestlarge
MOSFETs, the power dissipation numbers are only 0.21W
per device or less; large TO-220 packages and heat sinks
are not necessarily required in high ef?ciency applications.
Siliconix Si4410DY or International Recti?er IRF7413
(both in SO-8) or Siliconix SUD50N03-10 (TO-252) or ON
Semiconductor MTD20N03HDL (DPAK) are small footprint
surface mount devices with R DS(ON) values below 0.03Ω
at 5V of V GS that work well in LTC3831 circuits. Using a
the inductor’s value, the input-to-output voltage differen-
tial and the LTC3831’s maximum duty cycle. In a typical
2.5V input 1.25V output application, the maximum rise
time will be:
=
L O L O μ s
where L O is the inductor value in μH. With proper frequency
compensation, the combination of the inductor and output
Table 1. Recommended MOSFETs for LTC3831 Applications
TYPICAL INPUT
PARTS
Siliconix SUD50N03-10
R DS(ON)
AT 25oC (m Ω )
19
RATED CURRENT (A)
15 at 25°C
CAPACITANCE
C ISS (pF)
3200
θ JC ( ° C/W)
1.8
T JMAX (°C)
175
T0-252
10 at 100°C
Siliconix Si4410DY
20
10 at 25°C
2700
150
SO-8
8 at 70°C
ON Semiconductor MTD20N03DHL
35
20 at 25°C
880
1.67
150
D PAK
16 at 100°C
Fairchild FDS6670A
8
13 at 25°C
3200
25
150
SO-8
Fairchild FDS6680
10
11.5 at 25°C
2070
25
150
SO-8
ON Semiconductor MTB75N03HDL
9
75 at 25°C
4025
1
150
DS PAK
59 at 100°C
IR IRL3103S
19
64 at 25°C
1600
1.4
175
DD PAK
45 at 100°C
IR IRLZ44
28
50 at 25°C
3300
1
175
TO-220
36 at 100°C
Fuji 2SK1388
37
35 at 25°C
1750
2.08
150
TO-220
Note: Please refer to the manufacturer’s data sheet for testing conditions and detailed information.
3831fb
14
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