参数资料
型号: LTC4155IUFD#TRPBF
厂商: Linear Technology
文件页数: 44/52页
文件大小: 0K
描述: IC I2C POWER MANAGER DUAL 28QFN
标准包装: 2,500
系列: PowerPath™
功能: 充电管理,电源管理
电池化学: 锂离子(Li-Ion)、锂聚合物(Li-Pol)
电源电压: 4.35 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 28-WFQFN 裸露焊盘
供应商设备封装: 28-QFN(4x5)
包装: 带卷 (TR)
LTC4155
APPLICATIONS INFORMATION
the drain breakdown voltage rating of MN3 and MN4 and
negative protection down to the drain breakdown volt-
age rating of MN1 and MN2. Q1 and Q2 are small-signal
transistors to protect the gate oxides of MN1 and MN2.
Note that it is necessary to orient the N-channel MOSFETs
with the drain connections common and the source/body
connections to the input connector and the V BUS pin.
level, but the inductor current will increase rapidly to the
LTC4155’s peak current clamp as incremental inductance
tends toward zero. If an overload condition persists with
a small inductor, it is possible that the inductor could be
damaged by its own resistive temperature rise.
The inductor core should be made from a material such as
ferrite, suitable for switching at 2.25MHz without excessive
hysteretic losses. Table 37 lists several suitable inductors.
WALLSNS
WALLGT
Table 37. Recommended Inductors
TO POWER
INPUT
MN1
R1
V BUS
USBGT
USBSNS
LTC4155
R DC I MAX
MANUFACTURER PART NUMBER (mΩ) (A)
Vishay IHLP2525AHE-B1ROMO1 17.5 7
Coilcraft XFL4020-102ME 10.8 5.4
TDK TDKLTF5022T1R2N4R2-LF 21 4.2
PACKAGE
(mm)
6.5 × 6.9 × 3.2
4 × 4 × 2.1
5 × 5.2 × 2.2
OVGCAP
4155 F11
Figure 11. Single-Input Overvoltage Protection
I MAX is the lower of the typical 30% saturation current and self-heating
current specifications.
Choosing the Battery Charger MOSFETs
The LTC4155 requires a single external P-channel MOS-
Q3
Q1
R5
47k
R3 5M
R1 3.6k
WALLSNS
WALLGT
FET connected between the CHGSNS and BATSNS pins
to conduct battery charge and ideal diode currents. The
threshold voltage magnitude should be less than approxi-
TO WALL
INPUT
TO USB
INPUT
Q4
Q2
MN1
MN2
R4 5M
R6
47k
MN3
MN4
R2 3.6k
C1
OPT
V BUS
USBGT
USBSNS
OVGCAP
LTC4155
4155 F12
mately 2.5V. (The P-channel threshold might be expressed
as a negative number, V GS(th) , or as a positive number
V SG(th) ). Gate leakage current should be below 500nA.
Drain voltage breakdown and gate oxide breakdown volt-
ages should both be above 5V in magnitude. The LTC4155
contributes approximately 40mΩ resistance in the current
sense circuitry in series with the battery charger FET.
0.01μF
Figure 12. Dual-Input Positive and Negative Voltage Protection
Choosing the Inductor
The LTC4155 is designed to operate with a 1μH inductor,
with core saturation, winding resistance, and thermal
rise characteristics appropriate for the application’s peak
currents. The inductor current ripple magnitude is ap-
proximately 400mA under normal conditions, resulting
in a peak inductor current 200mA higher than the aver-
age output current of the switching regulator. The aver-
age output current of the step-down regulator is higher
than the average input current by the ratio V BUS /V OUT,
neglecting efficiency losses. The LTC4155 can tolerate
Channel resistance, R DS(ON) , should be small relative to
the 40mΩ for maximum efficiency both charging the bat-
tery and delivering power from the battery to the system
load. Table 38 lists several suitable P-channel transistors.
Optionally, a second P-channel MOSFET may be con-
nected in series with the first if the application requires
that power be cut off from any downstream devices on
V OUT in low power ship-and-store mode. Further details
about low power ship-and-store mode may be found in
the Operation section. The requirements for the second
device are the same as those enumerated above, with the
caveats that total gate leakage current is the sum of the
individual leakage currents and total R DS(ON) is the sum
of the individual R DS(ON) s.
transient excursions beyond the inductor’s core saturation
4155fc
44
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