参数资料
型号: LTC4160EUDC-1#TRPBF
厂商: Linear Technology
文件页数: 16/32页
文件大小: 0K
描述: IC SWITCH POWER MANAGER 20-QFN
标准包装: 2,500
系列: Bat-Track™, PowerPath™
功能: 电源管理
电池化学: 锂离子(Li-Ion)、锂聚合物(Li-Pol)
电源电压: 4.35 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-WFQFN 裸露焊盘
供应商设备封装: 20-QFN(3x4)
包装: 带卷 (TR)
LTC4160/LTC4160-1
OPERATION
TO USB
OR WALL
ADAPTER
13
V BUS
14
SW
3.5V TO
(BAT + 0.3V)
TO SYSTEM LOAD
PWM AND
GATE DRIVE
I SWITCH /N
V BUS
VOLTAGE
CONTROLLER
5.1V
BATTERY CHARGER
1V
V OUT
12
CLPROG
17
AVERAGE V BUS OUTPUT
CURRENT LIMIT
CONTROLLER
V FLOAT
IDEAL
DIODE
OmV
15mV
+
10
IDGATE
1.18V
I BAT /1000
1
OVGATE
× 2
+
6V
3.6V
0.3V
+–
11
BAT
2
OVSENS
OVERVOLTAGE PROTECTION
V OUT VOLTAGE
CONTROLLER
PROG
8
+
SINGLE CELL
Li-Ion
Figure 3. PowerPath Block Diagram – USB On-The-Go
BATTERY POWER
41601 F03
2000
IDEAL DIODE
400
currentwhentheNMOSswitchison.Thiswillcausethe
inductor current to run away and the voltage on CLPROG
to rise. When CLPROG reaches 1.2V the switching of the
synchronous PMOS is terminated and V OUT is applied
statically to its gate. This ensures that the inductor current
will have sufficient negative slope during the time current
is flowing out of the V BUS pin. The PMOS will resume
switching when CLPROG drops down to 1.15V.
The PMOS switch is enabled when V BUS rises above
V OUT + 180mV and is disabled when it falls below
V OUT + 70mV to prevent the inductor current from run-
ning away when not in current limit. If the PMOS switch is
disabled for more than 7.2ms then the switcher will shut
off, the FAULT pin will go low and a short circuit fault will be
declared. To re-enable step-up mode, the ENOTG pin, with
ID high, must be cycled low and then high or the ID pin, with
ENOTG grounded, must be cycled high and then low.
Ideal Diode(s) from BAT to V OUT
The LTC4160/LTC4160-1 each have an internal ideal diode
as well as a controller for an external ideal diode. Both the
internal and the external ideal diodes are always on and
will respond quickly whenever V OUT drops below BAT.
If the load current increases beyond the power allowed
from the bidirectional switching regulator, additional
power will be pulled from the battery via the ideal diode(s).
Furthermore, if power to V BUS (USB or wall adapter) is
removed, then all of the application power will be provided
by the battery via the ideal diode(s). The ideal diode(s) will
prevent V OUT from drooping with only the storage capaci-
tance required for the bidirectional switching regulator. The
internal ideal diode consists of a precision amplifier that
activates a large on-chip P-channel MOSFET whenever
2200
VISHAY Si2333
OPTIONAL EXTERNAL
1800 IDEAL DIODE
1600
1400 LTC4160/
LTC4160-1
1200
1000
800
600 ON
SEMICONDUCTOR
MBRM120LT3
200
0
0 60 120 180 240 300 360 420 480
FORWARD VOLTAGE (mV) (BAT – V OUT )
41601 F04
Figure 4. Ideal Diode V-I Characteristics
41601fa
16
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