收藏本站
参数资料
型号： M28W640ECT70ZB6T
厂商： STMICROELECTRONICS
元件分类： PROM
英文描述： 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
封装： 6.39 X 10.50 MM, 0.75 MM PITCH, TFBGA-48
文件页数： 9/54页
文件大小： 957K
代理商： M28W640ECT70ZB6T
17/54
M28W640ECT, M28W640ECB
Lock-Down State
Blocks that are Locked-Down (state (0,1,x))are
protected from program and erase operations (as
for Locked blocks) but their protection status can-
not be changed using software commands alone.
A Locked or Unlocked block can be Locked-Down
by issuing the Lock-Down command. Locked-
Down blocks revert to the Locked state when the
device is reset or powered-down.
The Lock-Down function is dependent on the WP
input pin. When WP=0 (VIL), the blocks in the
Lock-Down state (0,1,x) are protected from pro-
gram, erase and protection status changes. When
WP=1 (VIH) the Lock-Down function is disabled
(1,1,1) and Locked-Down blocks can be individu-
ally unlocked to the (1,1,0) state by issuing the
software command, where they can be erased and
programmed. These blocks can then be relocked
(1,1,1) and unlocked (1,1,0) as desired while WP
remains high. When WP is low , blocks that were
previously Locked-Down return to the Lock-Down
state (0,1,x) regardless of any changes made
while WP was high. Device reset or power-down
resets all blocks , including those in Lock-Down, to
the Locked state.
Locking Operations During Erase Suspend
Changes to block lock status can be performed
during an erase suspend by using the standard
locking command sequences to unlock, lock or
lock-down a block. This is useful in the case when
another block needs to be updated while an erase
operation is in progress.
To change block locking during an erase opera-
tion, first write the Erase Suspend command, then
check the status register until it indicates that the
erase operation has been suspended. Next write
the desired Lock command sequence to a block
and the lock status will be changed. After complet-
ing any desired lock, read, or program operations,
resume the erase operation with the Erase Re-
sume command.
If a block is locked or locked-down during an erase
suspend of the same block, the locking status bits
will be changed immediately, but when the erase
is resumed, the erase operation will complete.
Locking operations cannot be performed during a
program suspend. Refer to Appendix D, Com-
mand Interface and Program/Erase Controller
State, for detailed information on which com-
mands are valid during erase suspend.
Table 9. Block Lock Status
Table 10. Protection Status
Note: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read
in the Read Electronic Signature command with A1 = VIH and A0 = VIL.
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status.
3. A WP transition to VIH on a locked block will restore the previous DQ0 value, giving a 111 or 110.
Item
Address
Data
Block Lock Configuration
xx002
LOCK
Block is Unlocked
DQ0=0
Block is Locked
DQ0=1
Block is Locked-Down
DQ1=1
Current Protection Status(1)
(WP, DQ1, DQ0)
Next Protection Status(1)
(WP, DQ1, DQ0)
Current State
Program/Erase
Allowed
After Block
Lock Command
After Block
Unlock
Command
After Block Lock-
Down Command
After WP
transition
1,0,0
yes
1,0,1
1,0,0
1,1,1
0,0,0
1,0,1(2)
no
1,0,1
1,0,0
1,1,1
0,0,1
1,1,0
yes
1,1,1
1,1,0
1,1,1
0,1,1
1,1,1
no
1,1,1
1,1,0
1,1,1
0,1,1
0,0,0
yes
0,0,1
0,0,0
0,1,1
1,0,0
0,0,1(2)
no
0,0,1
0,0,0
0,1,1
1,0,1
0,1,1
no
0,1,1
1,1,1 or 1,1,0 (3)
相关PDF资料
PDF描述
M28W640ECT85N1 4M X 16 FLASH 3V PROM, 85 ns, PDSO48
M28W640ECT85ZB1T 4M X 16 FLASH 3V PROM, 85 ns, PBGA48
M28W640ECT70ZB1E 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
M28W640ECT85N1E 4M X 16 FLASH 3V PROM, 85 ns, PDSO48
M29W040B70N1E 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
相关代理商/技术参数
参数描述
M28W640FCB70N6 制造商:STMicroelectronics 功能描述:
M28W640FCB70N6E 功能描述:闪存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M28W640FCB70N6F 功能描述:闪存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M28W640FCB70ZB6E 功能描述:闪存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M28W640FCB70ZB6F 功能描述:闪存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*