- 您现在的位置：买卖IC网 > PDF目录359020 > M295V800AB90M1T (意法半导体) Circular Connector; No. of Contacts:37; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:14-35 PDF资料下载
参数资料
| 型号： | M295V800AB90M1T |
| 厂商： | 意法半导体 |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; No. of Contacts:37; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:14-35 |
| 中文描述： | 8兆1兆x8或512KB的x16插槽，启动座单电源闪存 |
| 文件页数： | 1/21页 |
| 文件大小： | 142K |
| 代理商： | M295V800AB90M1T |
1/21
PRELIMINARY DATA
January 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M29F800AT
M29F800AB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Single Supply Flash Memory
I
SINGLE 5V
±
10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 70ns
I
PROGRAMMING TIME
– 8
μ
s per Byte/Word typical
I
19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 16 Main Blocks
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– M29F800AT Device Code: 00ECh
– M29F800AB Device Code: 0058h
44
1
TSOP48 (N)
12 x 20mm
SO44 (M)
Figure 1. Logic Diagram
AI02198B
19
A0-A18
W
DQ0-DQ14
VCC
M29F800AT
M29F800AB
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
相关PDF资料 |
PDF描述 |
|---|---|
| M29DW128F60NF1 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF1E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF1F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF1T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF6 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M295V800AB90M3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
| M295V800AB90M6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
| M295V800AB90N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
| M295V800AB90N3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
| M295V800AB90N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
发布紧急采购，3分钟左右您将得到回复。