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参数资料
| 型号： | M295V800AB90M1T |
| 厂商： | 意法半导体 |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; No. of Contacts:37; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:14-35 |
| 中文描述： | 8兆1兆x8或512KB的x16插槽，启动座单电源闪存 |
| 文件页数： | 2/21页 |
| 文件大小： | 142K |
| 代理商： | M295V800AB90M1T |
M29F800AT, M29F800AB
2/21
Figure 2A. TSOP Connections
DQ3
DQ10
DQ9
DQ1
DQ2
DQ0
G
DQ6
DQ13
DQ5
DQ14
DQ12
DQ4
DQ15A–1
DQ7
VCC
DQ11
AI02199
M29F800AT
M29F800AB
12
13
1
24
25
36
37
48
DQ8
A16
BYTE
VSS
A0
VSS
E
A6
A5
A3
A2
A1
A8
NC
A9
A17
A7
A10
NC
NC
RB
NC
W
A18
A4
A12
A11
A13
A15
A14
RP
Table 1. Signal Names
A0-A18
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
SUMMARY DESCRIPTION
The M29F800A is an 8 Mbit (1Mb x8 or 512Kb
x16) non-volatile memory that canbe read, erased
and reprogrammed. These operations canbe per-
formed using a single5V supply. On power-up the
memory defaults to its Read mode where it can be
read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
Figure 2B. SO Connections
G
DQ0
DQ8
DQ1
DQ9
A3
A2
A1
A0
E
VSS
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
A12
DQ5
DQ12
DQ2
DQ10
DQ3
DQ11
VCC
DQ4
A9
A10
W
A8
RB
A18
A17
A4
RP
A7
A6
A5
AI02101B
M29F800AT
M29F800AB
8
9
10
11
12
13
14
15
16
17
2
3
4
5
6
7
32
31
30
29
28
27
26
25
24
23
22
20
21
19
18
44
43
42
41
39
38
37
36
35
34
33
A11
40
1
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| M29DW128F60NF1F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M295V800AB90M3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
| M295V800AB90M6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
| M295V800AB90N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
| M295V800AB90N3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
| M295V800AB90N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory |
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