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参数资料
型号： M295V800AB90M1T
厂商： 意法半导体
元件分类： 圆形连接器
英文描述： Circular Connector; No. of Contacts:37; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:14-35
中文描述： 8兆1兆x8或512KB的x16插槽，启动座单电源闪存
文件页数： 3/21页
文件大小： 142K
代理商： M295V800AB90M1T
3/21
M29F800AT, M29F800AB
The blocks in the memory are asymmetrically ar-
ranged, see Tables 3A and 3B, Block Addresses.
The first or last 64 Kbytes have been divided into
four additional blocks. The 16 Kbyte Boot Block
can beused for small initialization code to start the
microprocessor, the two 8 Kbyte Parameter
Blocks can be used for parameter storage and the
remaining 32K isa small MainBlock where the ap-
plication may be stored.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP48 (12 x 20mm)
and SO44 packages. Access times of 70ns and
90ns are available. The memory is supplied with
all the bits erased (set to ’1’).
SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram, and Table 1, Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A18).
The Address Inputs
select thecells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7).
The Data In-
puts/Outputs output thedata stored atthe selected
address during a Bus Read operation. During Bus
Write operations they represent the commands
sentto the Command Interfaceof theinternal state
machine.
Data Inputs/Outputs (DQ8-DQ14).
The Data In-
puts/Outputs output thedata stored atthe selected
address during a Bus Read operation when BYTE
is High, V
IH
. When BYTE is Low, V
IL
, these pins
are not used and are high impedance. During Bus
Write operations the Command Register does not
use these bits. When reading the Status Register
these bits should be ignored.
Data Input/Output or Address Input (DQ15A-1).
When BYTE is High, V
IH
, this pin behaves as a
Data Input/Output pin (as DQ8-DQ14). When
BYTE is Low, V
IL
, this pin behaves as an address
pin; DQ15A–1 Low will select the LSB of theWord
on the other addresses, DQ15A–1 High will select
the MSB. Throughout the text consider references
to the Data Input/Output to include this pin when
BYTE is High and references to the Address In-
puts to include this pin when BYTE is Low except
when stated explicitly otherwise.
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions forextended periods may affect device reliability. Referalso to theSTMicroelectronics SURE Program and other relevantqual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°
C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°
C
Ambient Operating Temperature (Temperature Range Option 3)
–40 to 125
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
V
IO(2)
Input or Output Voltage
–0.6 to 6
V
V
CC
Supply Voltage
–0.6 to 6
V
V
ID
Identification Voltage
–0.6 to 13.5
V
相关PDF资料
PDF描述
M29DW128F60NF1 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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相关代理商/技术参数
参数描述
M295V800AB90M3T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory
M295V800AB90M6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory
M295V800AB90N1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory
M295V800AB90N3T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory
M295V800AB90N6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory
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