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参数资料
| 型号： | M29W800B |
| 厂商： | 意法半导体 |
| 英文描述： | 8Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(8Mb低压闪速存储器) |
| 中文描述： | 8Mbit（1兆x8或512KB的x16插槽，引导块）低电压单电源闪存（8兆低压闪速存储器） |
| 文件页数： | 22/33页 |
| 文件大小： | 229K |
| 代理商： | M29W800B |
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Symbol
Alt
Parameter
M29W800T / M29W800B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
90
100
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
45
50
ns
t
DVEH
t
DS
Input Valid to Chip EnableHigh
45
50
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
30
30
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
0
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
45
50
ns
t
GHEL
Output Enable High Chip Enable Low
0
0
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
50
50
μ
s
t
EHGL
t
OEH
Chip Enable High to Output EnableLow
0
0
ns
t
PHPHH
(1,2)
t
VIDR
RP Rise TIme to V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
EHRL
(1)
t
BUSY
Program Erase Valid to RB Delay
90
90
ns
t
PHWL(1)
t
RSP
RP High to Write Enable Low
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotectionoperation.
Table16A. Write AC Characteristics,Chip EnableControlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C or–40 to 85
°
C)
Erase Suspend (ES) Instruction.
The Block
Eraseoperationmaybe suspendedbythisinstruc-
tion which consists of writing the command B0h
withoutany specificaddress.No Codedcyclesare
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhentheP/E.C.is suspended.The Toggle
bitswillstoptogglingbetween0.1
μ
s and15
μ
s after
the Erase Suspend(ES) command has been writ-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. A Read from
a blocknotbeingerasedreturnsvaliddata. During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. AProgram operation can be initiatedduring
erase suspend in one of the blocks not being
erased. Itwill resultin bothDQ2 andDQ6toggling
whenthedataisbeingprogrammed.ARead/Reset
command will definitively abort erasure and result
in invaliddata in the blocksbeing erased.
22/33
M29W800T, M29W800B
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| M29W800DB45N6E | 功能描述:闪存 8 MBIT (1MB) 3V SUPPLY RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W800DB45N6F | 功能描述:闪存 STD FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W800DB45ZE6E | 功能描述:闪存 8 MBIT (1MB) 3V SUPPLY RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W800DB45ZE6F | 功能描述:闪存 STD FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W800DB45ZE6F TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 45NS 48TFBGA |
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