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参数资料
| 型号： | M29W800B |
| 厂商： | 意法半导体 |
| 英文描述： | 8Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(8Mb低压闪速存储器) |
| 中文描述： | 8Mbit（1兆x8或512KB的x16插槽，引导块）低电压单电源闪存（8兆低压闪速存储器） |
| 文件页数： | 3/33页 |
| 文件大小： | 229K |
| 代理商： | M29W800B |
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Instructions for Read/Reset,Auto Select for read-
ing the Electronic Signature or Block Protection
status,Programming,Blockand ChipErase,Erase
Suspend and Resume are written to the device in
cyclesof commandstoa CommandInterfaceusing
standardmicroprocessorwrite timings.
The device is offeredin TSOP48(12 x 20mm)and
SO44packages.Both normaland reversepinouts
are availablefor the TSOP48package.
Organisation
TheM29W800is organisedas 1 Mx8 or512Kx16
bitsselectableby the BYTEsignal.When BYTEis
Low theByte-wide x8 organisationis selectedand
the address lines are DQ15A–1 and A0-A18. The
Data Input/Output signal DQ15A–1 acts as ad-
dress line A–1 which selects the lower or upper
Byte of the memoryword for output on DQ0-DQ7,
DQ8-DQ14 remain at High impedance. When
BYTEis Highthe memoryuses the addressinputs
A0-A18 and the Data Input/Outputs DQ0-DQ15.
Memory control is provided by Chip Enable E,
Output Enable G and Write EnableW inputs.
AReset/BlockTemporaryUnprotection RPtri-level
input provides a hardware reset when pulled Low,
andwhenheldHigh(atV
ID
)temporarily unprotects
blocks previously protected allowing them to be
programedanderased.EraseandProgramopera-
tions are controlled by an internal Program/Erase
Controller(P/E.C.). StatusRegisterdata output on
DQ7providesa Data Pollingsignal, and DQ6and
DQ2provideToggle signalsto indicatethe stateof
the P/E.C operations. A Ready/Busy RB output
indicatesthe completionof the internalalgorithms.
DESCRIPTION
(Cont’d)
MemoryBlocks
The devicesfeature asymmetrically blockedarchi-
tectureprovidingsystemmemory integration.Both
M29W800TandM29W800Bdeviceshavean array
of 19 blocks, one Boot Block of 16 KBytes or 8
KWords, two Parameter Blocks of 8 KBytes or 4
KWords, one Main Block of 32 KBytes or 16
KWordsand fifteenMainBlocksof 64KBytesor 32
KWords.TheM29W800ThastheBootBlockatthe
top of the memory address space and the
M29W800B locates the Boot Block starting at the
bottom. The memory maps are showed in Figure
3.
Each block can be erased separately, any combi-
nation of blocks can be specified for multi-block
eraseor the entire chipmay beerased.The Erase
operations are managed automatically by the
P/E.C. The block erase operation can be sus-
pended in order to read from or program to any
block not beingersased, and then resumed.
Block protectionprovides additional data security.
Each block can be separatelyprotected or unpro-
tectedagainst Program or Erase on programming
equipment.All previously protected blocks can be
temporarily unprotectedin the application.
Bus Operations
The following operations can be performed using
theappropriatebus cycles:Read(Array,Electronic
Signature, Block Protection Status), Write com-
mand, OutputDisable,Standby,Reset, Block Pro-
tection, Unprotection, Protection Verify,
Unprotection Verify and Block Temporary Unpro-
tection.See Tables4 and 5.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(3)
–40 to 85
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
V
IO(2)
Storage Temperature
–65 to 150
°
C
Input or Output Voltages
–0.6to 5
V
V
CC
Supply Voltage
–0.6to 5
V
V
(A9, E, G, RP)
(2)
A9, E, G, RP Voltage
–0.6to 13.5
V
Notes:
1. Except for therating ”Operating Temperature Range”, stresses above those listed in theTable ”AbsoluteMaximum Ratings”
may cause permanentdamage to thedevice. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operatingsections of this specification is not implied.Exposure to Absolute Maximum
Rating conditions for extendedperiods may affectdevice reliability.Refer also tothe STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum Voltagemay undershoot to –2V during transitionand for less than 20ns.
3. Depends on range.
Table2. Absolute MaximumRatings
(1)
3/33
M29W800T M29W800B
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| M29W800DB45N6E | 功能描述:闪存 8 MBIT (1MB) 3V SUPPLY RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W800DB45N6F | 功能描述:闪存 STD FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W800DB45ZE6E | 功能描述:闪存 8 MBIT (1MB) 3V SUPPLY RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W800DB45ZE6F | 功能描述:闪存 STD FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W800DB45ZE6F TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 45NS 48TFBGA |
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