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参数资料
| 型号： | M390S1723DTU-C7A |
| 元件分类： | DRAM |
| 英文描述： | 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 9/12页 |
| 文件大小： | 188K |
| 代理商： | M390S1723DTU-C7A |
M390S1723DTU
Rev. 0.1. Sept. 2001
PC133/PC100 Low Profile Registered DIMM
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
Version
Unit
Note
- 7C
-7A
-1H
-1L
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
1400
1310
mA
1
Precharge standby current
in power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
368
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC = ∞
20
Precharge standby current
in non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
530
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
92
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
395
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC = ∞
47
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
620
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
227
mA
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
1490
1400
mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
2480
2300
2210
mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
368
mA
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相关代理商/技术参数 |
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| M390S2858CT1 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:SDRAM DIMM |
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