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参数资料
| 型号： | M45PE10-VMP6T |
| 厂商： | 意法半导体 |
| 元件分类： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 13/34页 |
| 文件大小： | 454K |
| 代理商： | M45PE10-VMP6T |
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M45PE10
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Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction
is the only way to put the device in the lowest con-
sumption mode (the Deep Power-down mode). It
can also be used as an extra software protection
mechanism, while the device is not in active use,
since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (S) High deselects the device,
and puts the device in the Standby Power mode (if
there is no internal cycle currently in progress). But
this mode is not the Deep Power-down mode. The
Deep Power-down mode can only be entered by
executing the Deep Power-down (DP) instruction,
to reduce the standby current (from ICC1 to ICC2,
as specified in Table 11.).
Once the device has entered the Deep Power-
down mode, all instructions are ignored except the
Release from Deep Power-down (RDP) instruc-
tion. This releases the device from this mode.
The Deep Power-down mode automatically stops
at Power-down, and the device always Powers-up
in the Standby Power mode.
The Deep Power-down (DP) instruction is entered
by driving Chip Select (S) Low, followed by the in-
struction code on Serial Data Input (D). Chip Se-
lect (S) must be driven Low for the entire duration
of the sequence.
The instruction sequence is shown in Figure 17..
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Deep Power-down (DP) instruc-
tion is not executed. As soon as Chip Select (S) is
driven High, it requires a delay of tDP before the
supply current is reduced to ICC2 and the Deep
Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an
Erase, Program or Write cycle is in progress, is re-
jected without having any effects on the cycle that
is in progress.
Figure 17. Deep Power-down (DP) Instruction Sequence
C
D
AI03753D
S
2
1
34567
0
tDP
Deep Power-down Mode
Stand-by Mode
Instruction
相关PDF资料 |
PDF描述 |
|---|---|
| M45PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M45PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M464S3354BTS-C7A | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| M470T5663EH3-CF7 | DDR DRAM MODULE, ZMA200 |
| M470T6464EHS-CE6 | DDR DRAM MODULE, ZMA200 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M45PE10-VMP6TG | 功能描述:闪存 1 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M45PE10-VMP6TP | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMS6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M45PE16 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
| M45PE16-VMP6G | 功能描述:闪存 16 Mbit low-voltage RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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