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参数资料
| 型号： | M45PE10-VMP6T |
| 厂商： | 意法半导体 |
| 元件分类： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 8/34页 |
| 文件大小： | 454K |
| 代理商： | M45PE10-VMP6T |
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M45PE10
16/34
Page Write (PW)
The Page Write (PW) instruction allows bytes to
be written in the memory. Before it can be accept-
ed, a Write Enable (WREN) instruction must previ-
ously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device
sets the Write Enable Latch (WEL).
The Page Write (PW) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, three address bytes and at least
one data byte on Serial Data Input (D). The rest of
the page remains unchanged if no power failure
occurs during this write cycle.
The Page Write (PW) instruction performs a page
erase cycle even if only one byte is updated.
If the 8 least significant address bits (A7-A0) are
not all zero, all transmitted data exceeding the ad-
dressed page boundary wrap round, and are writ-
ten from the start address of the same page (the
one whose 8 least significant address bits (A7-A0)
are all zero). Chip Select (S) must be driven Low
for the entire duration of the sequence.
The instruction sequence is shown in Figure 13..
If more than 256 bytes are sent to the device, pre-
viously latched data are discarded and the last 256
data bytes are guaranteed to be written correctly
within the same page. If less than 256 Data bytes
are sent to device, they are correctly written at the
requested addresses without having any effects
on the other bytes of the same page.
For optimized timings, it is recommended to use
the Page Write (PW) instruction to write all con-
secutive targeted Bytes in a single sequence ver-
sus using several Page Write (PW) sequences
with each containing only a few Bytes (see AC
Chip Select (S) must be driven High after the
eighth bit of the last data byte has been latched in,
otherwise the Page Write (PW) instruction is not
executed.
As soon as Chip Select (S) is driven High, the self-
timed Page Write cycle (whose duration is tPW) is
initiated. While the Page Write cycle is in progress,
the Status Register may be read to check the val-
ue of the Write In Progress (WIP) bit. The Write In
Progress (WIP) bit is 1 during the self-timed Page
Write cycle, and is 0 when it is completed. At some
unspecified time before the cycle is complete, the
Write Enable Latch (WEL) bit is reset.
A Page Write (PW) instruction applied to a page
that is Hardware Protected is not executed.
Any Page Write (PW) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
progress.
Figure 13. Page Write (PW) Instruction Sequence
Note: 1. Address bits A23 to A17 are Don’t Care
2. 1
≤n ≤256
C
D
AI04045
S
42
41
43 44 45 46 47 48 49 50
52 53 54 55
40
C
D
S
23
2
1
3456789 10
28 29 30 31 32 33 34 35
22 21
3210
36 37 38
Instruction
24-Bit Address
0
765432
0
1
Data Byte 1
39
51
765432
0
1
Data Byte 2
765432
0
1
Data Byte 3
Data Byte n
765432
0
1
MSB
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PDF描述 |
|---|---|
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| M45PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M45PE10-VMP6TG | 功能描述:闪存 1 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M45PE10-VMP6TP | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMS6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M45PE16 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
| M45PE16-VMP6G | 功能描述:闪存 16 Mbit low-voltage RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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