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参数资料
| 型号： | M45PE10-VMP6T |
| 厂商： | 意法半导体 |
| 元件分类： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 4/34页 |
| 文件大小： | 454K |
| 代理商： | M45PE10-VMP6T |
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M45PE10
12/34
Read Identification (RDID)
The Read Identification (RDID) instruction allows
the 8-bit manufacturer identification to be read, fol-
lowed by two bytes of device identification. The
manufacturer identification is assigned by JEDEC,
and has the value 20h for STMicroelectronics. The
device identification is assigned by the device
manufacturer, and indicates the memory type in
the first byte (40h), and the memory capacity of the
device in the second byte (11h).
Any Read Identification (RDID) instruction while
an Erase or Program cycle is in progress, is not
decoded, and has no effect on the cycle that is in
progress.
The device is first selected by driving Chip Select
(S) Low. Then, the 8-bit instruction code for the in-
struction is shifted in. This is followed by the 24-bit
device identification, stored in the memory, being
shifted out on Serial Data Output (Q), each bit be-
ing shifted out during the falling edge of Serial
Clock (C).
The instruction sequence is shown in Figure 9.
The Read Identification (RDID) instruction is termi-
nated by driving Chip Select (S) High at any time
during data output.
When Chip Select (S) is driven High, the device is
put in the Standby Power mode. Once in the
Standby Power mode, the device waits to be se-
lected, so that it can receive, decode and execute
instructions.
Table 5. Read Identification (RDID) Data-Out Sequence
Figure 9. Read Identification (RDID) Instruction Sequence and Data-Out Sequence
Manufacturer Identification
Device Identification
Memory Type
Memory Capacity
20h
40h
11h
C
D
S
2
1
3456789 10 11 12 13 14 15
Instruction
0
AI06809
Q
Manufacturer Identification
High Impedance
MSB
15 14 13
3210
Device Identification
MSB
16 16 18
28 29 30 31
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M45PE10-VMP6TG | 功能描述:闪存 1 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M45PE10-VMP6TP | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMS6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M45PE16 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
| M45PE16-VMP6G | 功能描述:闪存 16 Mbit low-voltage RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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