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| 型号： | MAX15018BASA+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 11/14页 |
| 文件大小： | 0K |
| 描述： | IC MOSF DRVR HALF BRDG HS 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 100 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 33ns |
| 电流 - 峰： | 3A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 125V |
| 电源电压： | 8 V ~ 12.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOICN 裸露焊盘 |
| 包装： | 管件 |
125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
Layout Information
The MAX15018_/MAX15019_ drivers source and sink
large currents to create very fast rise and fall edges at
the gates of the switching MOSFETs. The high di/dt can
cause unacceptable ringing if the trace lengths and
impedances are not well controlled. Use the following
PCB layout guidelines when designing with the
MAX15018_/MAX15019_:
? It is important that the V DD voltage (with respect to
ground) or BST voltage (with respect to HS) does not
exceed 15V. Voltage spikes higher than 15V from
V DD to GND or from BST to HS can damage the
device. Place one or more low-ESL 0.1μF decoupling
ceramic capacitors from V DD to GND and from BST
to HS as close as possible to the part. The ceramic
decoupling capacitors should be at least 20 times
the gate capacitance being driven.
? There are two AC current loops formed between the
IC and the gate of the MOSFET being driven. The
MOSFET looks like a large capacitance from gate to
source when the gate is being pulled low. The active
current loop is from the MOSFET driver output (DL or
DH) to the MOSFET gate, to the MOSFET source, and
to the return terminal of the MOSFET driver (either
GND or HS). When the gate of the MOSFET is being
pulled high, the active current loop is from the MOS-
FET driver output, (DL or DH), to the MOSFET gate, to
the MOSFET source, to the return terminal of the dri-
vers decoupling capacitor, to the positive terminal of
the decoupling capacitor, and to the supply connec-
tion of the MOSFET driver. The decoupling capacitor
will be either C BST for the high-side MOSFET or the
V DD decoupling capacitor for the low-side MOSFET.
Care must be taken to minimize the physical distance
and the impedance of these AC current paths.
? Solder the exposed pad of the 8-pin SO-EP package
to a large copper plane to achieve the rated power
dissipation.
Typical Application Circuits
V DD = 8V TO 12.6V
V DD
BST
V IN = 0 TO 125V
DH
N
PWM1
IN_H
MAX15018A
PWM2
HS
N
V OUT
IN_L
DL
N
N
GND
Figure 2. Half-Bridge Converter Application with Secondary-Side Synchronous Rectification
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX15018BASA+ | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15018BASA+T | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15019AASA+ | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15019AASA+T | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15019BASA+ | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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