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| 型号： | MAX15018BASA+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 7/14页 |
| 文件大小： | 0K |
| 描述： | IC MOSF DRVR HALF BRDG HS 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 100 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 33ns |
| 电流 - 峰： | 3A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 125V |
| 电源电压： | 8 V ~ 12.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOICN 裸露焊盘 |
| 包装： | 管件 |
125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
Typical Operating Characteristics (continued)
(T A = +25°C, unless otherwise noted.)
DELAY MATCHING (DH AND DL RISING)
MAX15018 toc18
RESPONSE TO V DD GLITCH
MAX15018 toc19
10ns/div
C L = 0pF
V IN_
10V/div
V DH AND V DL
10V/div
V DH_
V DL
V DD
V IN_
40 μ s/div
10V/div
10V/div
10V/div
10V/div
Pin Description
PIN
1
2
3
4
5
6
7
8
—
NAME
V DD
BST
DH
HS
IN_H
IN_L
GND
DL
EP
FUNCTION
Input Supply Voltage. Valid supply voltage ranges from 8V to 12.6V. Bypass V DD to GND with a parallel
combination of 0.1μF and 1μF ceramic capacitors as close to the IC as possible.
Boost Flying Capacitor Connection. Connect a 0.22μF ceramic capacitor from BST to HS as close to the IC
as possible for the high-side MOSFET driver supply.
High-Side Gate Driver Output. Driver output for the high-side MOSFET gate.
Source Connection for High-Side MOSFET. Also serves as the return for the high-side driver.
High-Side Noninverting Logic Input
Low-Side Noninverting (MAX15018A/MAX15019A) or Low-Side Inverting (MAX15018B/MAX15019B) Input
Ground. Use GND as a return path to the DL driver output and the IN_H, IN_L inputs. Must be connected to
ground.
Low-Side Gate Driver Output. Driver output for the low-side MOSFET gate.
Exposed Pad. Internally connected to GND. Externally connect the exposed pad to a large ground plane to
aid in heat dissipation. Grounding EP does not substitute the requirement to connect GND to ground.
_______________________________________________________________________________________
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX15018BASA+ | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15018BASA+T | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15019AASA+ | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15019AASA+T | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15019BASA+ | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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