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| 型号： | MAX15018BASA+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | IC MOSF DRVR HALF BRDG HS 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 100 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 33ns |
| 电流 - 峰： | 3A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 125V |
| 电源电压： | 8 V ~ 12.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOICN 裸露焊盘 |
| 包装： | 管件 |
125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
V DD to GND ............................................................-0.3V to +15V
IN_H, IN_L to GND .................................................-0.3V to +15V
DL to GND ..................................................-0.3V to (V DD + 0.3V)
DH to HS.....................................................-0.3V to (V DD + 0.3V)
BST to HS ...............................................................-0.3V to +15V
HS to GND (repetitive transient)..............................-5V to +130V
HS dv/dt to GND................................................................50V/ns
Continuous Power Dissipation (T A = +70°C)
Single and Multilayer Board
8-Pin SO-EP (derate 23.8mW/°C above +70°C)*..........1.904W
θ JC ...................................................................................6°C/W
Operating Temperature .....................................-40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
*As per JEDEC Standard 51 (Single-Layer Board).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V DD = V BST = 8V to 12.6V, V HS = V GND = 0V, T A = T J = -40°C to +125°C, unless otherwise noted. Typical values are at V DD = V BST
= 12V and T A = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY
Operating Supply Voltage
V VDD
IN_H and IN_L are
MAX15018A/
MAX15018B
8.0
65
12.6
130
V
V DD Quiescent Supply Current
I DDQ
unconnected (no
switching)
MAX15019A/
MAX15019B
95
190
μA
V DD Operating Supply Current
BST Quiescent Supply Current
BST Operating Supply Current
I DDO
I BSTQ
I BSTO
f SW = 500kHz, V DD = 12V,
no capacitive load
IN_H and IN_L are unconnected (no
switching)
f SW = 500kHz, V BST - V HS = 12V, no
capacitive load
2.75
95
2.75
3.75
190
3.75
mA
μA
mA
UVLO (V DD to GND)
V DD_UVLO
V DD rising
6.5
7.3
8
V
UVLO (BST to HS)
V BST_UVLO V BST rising
6.2
6.9
7.6
V
UVLO Hysteresis
LOGIC INPUT
0.5
V
Input-Logic High
V IH
MAX15018A/MAX15018B (CMOS)
0.67 x
V DD
V
MAX15019A/MAX15019B (TTL)
2
Input-Logic Low
V IL
MAX15018A/MAX15018B (CMOS)
0.33 x
V DD
V
MAX15019A/MAX15019B (TTL)
0.8
Logic-Input Hysteresis
V HYS
MAX15018A/MAX15018B (CMOS)
MAX15019A/MAX15019B (TTL)
1.65
0.4
V
2
_______________________________________________________________________________________
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| MAX15018BASA+ | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15018BASA+T | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15019AASA+ | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15019AASA+T | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX15019BASA+ | 功能描述:功率驱动器IC 125V/3A High-Speed Half-B MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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