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| 型号： | MAX15035ETL+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 5/27页 |
| 文件大小： | 0K |
| 描述： | IC REG BOOST SYNC 15A 40TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 类型： | 升压（升压） |
| 输出类型： | 固定 |
| 输出数： | 1 |
| 输出电压： | 1.05V，1.5V |
| 输入电压： | 4.5 V ~ 26 V |
| PWM 型： | 电流模式 |
| 电流 - 输出： | 15A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-WFQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
| 供应商设备封装： | 40-TQFN-EP（6x6） |
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15A Step-Down Regulator with Internal Switches
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V IN = 12V, V DD = V CC = V EN = 5V, REFIN = ILIM = REF, SKIP = GND. T A = -40°C to +85°C , unless otherwise
specified.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
UNITS
REFERENCE
Reference Voltage
V REF
V DD = 4.5V to 5.5V
1.985
2.015
V
FAULT DETECTION
Output Overvoltage-Protection
Trip Threshold
Output Undervoltage-Protection
Trip Threshold
Output Undervoltage
Fault-Propagation Delay
PGOOD Output-Low Voltage
V CC Undervoltage Lockout
Threshold
OVP
UVP
t UVP
V UVLO(VCC)
With respect to the internal target voltage
(error comparator threshold) rising edge;
hysteresis = 50mV
With respect to the internal target voltage
(error comparator threshold);
falling edge; hysteresis = 50mV
FB forced 25mV below trip threshold
I SINK = 3mA
Rising edge, PWM disabled below this level,
hysteresis = 100mV
250
-240
80
3.95
350
-160
400
0.4
4.45
mV
mV
μs
V
V
CURRENT LIMIT
ILIM Input Range
0.4
V REF
V
Current-Limit Threshold
Ultrasonic Frequency
V ILIMIT
V ILIM = 0.4V, V GND = V LX
ILIM = REF (2.0V), V GND - V LX
SKIP = open (3.3V), V FB = V REFIN + 50mV
17
90
17
23
110
mV
kHz
INPUTS AND OUTPUTS
EN Logic-Input Threshold
V EN
EN rising edge hysteresis = 450mV (typ)
1.20
2.20
V
High (5V V DD )
V CC -
0.4
SKIP Quad-Level Input
Logic Levels
V SKIP
Mid (3.3V)
3.0
3.6
V
Ref (2.0V)
Low (GND)
1.7
2.3
0.4
Note 1: Limits are 100% production tested at T A = +25°C. Maximum and minimum limits over temperature are guaranteed by
design and characterization.
Note 2: The 0 to 0.5V range is guaranteed by design, not production tested.
Note 3: On-time and off-time specifications are measured from 50% point to 50% point at the unloaded LX node. The typical 25ns
dead time that occurs between the high-side driver falling edge (high-side MOSFET turn-off) and the low-side MOSFET turn-
on) is included in the on-time measurement. Similarly, the typical 25ns dead time that occurs between the low-side driver
falling edge (low-side MOSFET turn-off) and the high-side driver rising edge (high-side MOSFET turn-on) is included in the
off-time measurement.
_______________________________________________________________________________________
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