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参数资料
| 型号： | MAX15058EWL+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/21页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 3A 9WLP |
| 产品培训模块： | Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.6 V ~ 5.17 V |
| 输入电压： | 2.7 V ~ 5.5 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 1MHz |
| 电流 - 输出： | 3A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 9-WFBGA，WLBGA |
| 包装： | 带卷 (TR) |
| 供应商设备封装： | 9-WLP（1.5x1.5） |
High-Efficiency, 3A, Current-Mode
Synchronous, Step-Down Switching Regulator
ABSOLUTE MAXIMUM RATINGS
IN, PGOOD to GND ................................................-0.3V to +6V
LX to GND ..................................................-0.3V to (V IN + 0.3V)
LX to GND .......................................-1V to (V IN + 0.3V) for 50ns
EN, COMP, FB, SS/REFIN, SKIP to GND ...-0.3V to (V IN + 0.3V)
LX Current (Note 1) ................................................... -6A to +6A
Output Short-Circuit Duration ....................................Continuous
Continuous Power Dissipation (T A = +70 N C)
9-Bump WLP Multilayer Board
(derate 14.1mW/ N C above T A = +70 N C) ....................1127mW
Operating Temperature Range .......................... -40 N C to +85 N C
Storage Temperature Range............................ -65 N C to +150 N C
Soldering Temperature (reflow) ......................................+260 N C
Note 1: LX has internal clamp diodes to GND and IN. Applications that forward bias these diodes should not exceed the IC’s pack-
age power dissipation limits.
PACKAGE THERMAL CHARACTERISTICS (Note 2)
WLP
Junction-to-Case Thermal Resistance ( B JC ) ...................26 N C/W
Junction-to-Ambient Thermal Resistance ( B JA ) ..............71 N C/W
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V IN = 5V, T A = -40 N C to +85 N C, unless otherwise noted. Typical values are at T A = +25 N C.) (Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
IN Voltage Range
IN Shutdown Supply Current
V IN
V EN = 0V
2.7
0.2
5.5
2
V
F A
IN Supply Current
V IN Undervoltage Lockout
Threshold
V IN Undervoltage Lockout
Hysteresis
I IN
V EN = 5V, V FB = 0.65V, no switching
LX starts switching, V IN rising
LX stops switching, V IN falling
1.56
2.6
200
2.3
2.7
mA
V
mV
ERROR AMPLIFIER
Transconductance
Voltage Gain
g MV
A VEA
1.5
90
mS
dB
FB Set-Point Accuracy
FB Input Bias Current
V FB
I FB
Over line, load, and temperature
V FB = 0.6V
594
-500
600
606
+500
mV
nA
COMP to Current-Sense
Transconductance
COMP Clamp Low
g MC
V FB = 0.65V, V SS = 0.6V
18
0.94
A/V
V
POWER SWITCHES
LX On-Resistance, High-Side
pMOS
LX On-Resistance, Low-Side
nMOS
30
18
m I
m I
High-Side Switch Current-Limit
Threshold
Low-Side Switch Sink Current-
Limit Threshold
Low-Side Switch Source Current-
Limit Threshold
I HSCL
5
4
5
A
A
A
2
______________________________________________________________________________________
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