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参数资料
| 型号： | MAX1533AETJ+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 32/38页 |
| 文件大小： | 0K |
| 描述： | IC POWER SUPPLY CONTROLER 32TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 电源控制器 |
| 输入电压： | 4.5 V ~ 26 V |
| 电流 - 电源： | 15µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-WFQFN 裸露焊盘 |
| 供应商设备封装： | 32-TQFN-EP（5x5） |
| 包装： | 带卷 (TR) |
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High-Efficiency, 5x Output, Main Power-Supply
Controllers for Notebook Computers
The 40/60 optimal interleaved architecture of the
MAX1533A/MAX1537A allows the input voltage to go
as low as 8.3V before the duty cycles begin to overlap.
This offers improved efficiency over a regular 180 ° out-
of-phase architecture where the duty cycles begin to
overlap below 10V. Figure 10 shows the input-capacitor
RMS current vs. input voltage for an application that
requires 5V/5A and 3.3V/5A. This shows the improve-
ment of the 40/60 optimal interleaving over 50/50 inter-
leaving and in-phase operation.
For most applications, nontantalum chemistries (ceram-
ic, aluminum, or OS-CON) are preferred due to their
resistance to power-up surge currents typical of sys-
tems with a mechanical switch or connector in series
with the input. Choose a capacitor that has less than
10 ° C temperature rise at the RMS input current for opti-
mal reliability and lifetime.
Power-MOSFET Selection
Most of the following MOSFET guidelines focus on the
challenge of obtaining high load-current capability
when using high-voltage (>20V) AC adapters. Low-cur-
rent applications usually require less attention.
The high-side MOSFET (N H ) must be able to dissipate
the resistive losses plus the switching losses at both
INPUT CAPACITOR RMS CURRENT
V IN(MIN) and V IN(MAX) . Ideally, the losses at V IN(MIN)
should be roughly equal to the losses at V IN(MAX) , with
lower losses in between. If the losses at V IN(MIN) are
significantly higher, consider increasing the size of N H .
Conversely, if the losses at V IN(MAX) are significantly
higher, consider reducing the size of N H . If V IN does
not vary over a wide range, maximum efficiency is
achieved by selecting a high-side MOSFET (N H ) that
has conduction losses equal to the switching losses.
Choose a low-side MOSFET (N L ) that has the lowest
possible on-resistance (R DS(ON) ), comes in a moder-
ate-sized package (i.e., SO-8, DPAK, or D 2 PAK), and is
reasonably priced. Ensure that the MAX1533A/
MAX1537A DL_ gate driver can supply sufficient cur-
rent to support the gate charge and the current injected
into the parasitic drain-to-gate capacitor caused by the
high-side MOSFET turning on; otherwise, cross-
conduction problems may occur. Switching losses are
not an issue for the low-side MOSFET since it is a zero-
voltage switched device when used in the step-down
topology.
Power-MOSFET Dissipation
Worst-case conduction losses occur at the duty factor
extremes. For the high-side MOSFET (N H ), the worst-
case power dissipation due to resistance occurs at
minimum input voltage:
PD ( N H Re sistive ) = ? OUT ? ( I LOAD ) R DS ( ON )
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
vs. INPUT VOLTAGE
IN PHASE
50/50 INTERLEAVING
40/60 OPTIMAL
INTERLEAVING
5V/5A AND 3.3V/5A
? V ? 2
? V IN ?
Generally, use a small high-side MOSFET to reduce
switching losses at high input voltages. However, the
R DS(ON) required to stay within package power-dissi-
pation limits often limits how small the MOSFET can be.
The optimum occurs when the switching losses equal
the conduction (R DS(ON) ) losses. High-side switching
losses do not become an issue until the input is greater
than approximately 15V.
Calculating the power dissipation in high-side
6
8
10
12
14
16
18
20
MOSFETs (N H ) due to switching losses is difficult, since
V IN (V)
it must allow for difficult-to-quantify factors that influ-
D LX3 = OUT3
D LX5 = OUT5
D OL = DUTY-CYCLE OVERLAP FRACTION
I RMS =
INPUT RMS CURRENT FOR INTERLEAVED OPERATION
(I OUT5 - I IN ) 2 (D LX5 - D OL ) + (I OUT3 - I IN ) 2 (D LX3 - D OL ) +
(I OUT5 + I OUT3 - I IN )2 D OL + I IN2 (1 - D LX5 - D LX3 + D OL )
V V
V IN V IN
ence the turn-on and turn-off times. These factors
include the internal gate resistance, gate charge,
threshold voltage, source inductance, and PC board
layout characteristics. The following switching loss cal-
culation provides only a very rough estimate and is no
substitute for breadboard evaluation, preferably includ-
( )
( V IN ( MAX ) )
INPUT RMS CURRENT FOR SINGLE-PHASE OPERATION
I RMS = I LOAD V OUT (V IN - V OUT )
V IN
Figure 10. Input RMS Current
ing verification using a thermocouple mounted on N H :
2
C RSS f SW I LOAD
PD ( N H Switching ) =
I GATE
32
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX1533ETJ | 功能描述:电流和电力监控器、调节器 RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
| MAX1533ETJ+ | 功能描述:电流和电力监控器、调节器 PS Controllers for for Notebooks RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
| MAX1533ETJ+T | 功能描述:电流和电力监控器、调节器 PS Controllers for for Notebooks RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
| MAX1533ETJ-T | 功能描述:电流和电力监控器、调节器 RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
| MAX1533EVKIT | 功能描述:电流和电力监控器、调节器 Evaluation Kit for the MAX1533 RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
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