参数资料
型号: MAX5099ATJ+T
厂商: Maxim Integrated Products
文件页数: 3/27页
文件大小: 0K
描述: IC REG BUCK SYNC ADJ DL 32TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
类型: 降压(降压)
输出类型: 可调式
输出数: 2
输出电压: 0.8 V ~ 17.1 V
输入电压: 4.5 V ~ 19 V
PWM 型: 电压模式
频率 - 开关: 200kHz ~ 2.2MHz
电流 - 输出: 1A,2A
同步整流器:
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 32-WFQFN 裸露焊盘
包装: 带卷 (TR)
供应商设备封装: 32-TQFN-EP(5x5)
Dual, 2.2MHz, Automotive Synchronous Buck
Converter with 80V Load-Dump Protection
ELECTRICAL CHARACTERISTICS (continued)
(VDRV = V L , V+ = V L = IN_HIGH = 5.2V or V+ = IN_HIGH = 5.2V to 19V, EN_ = V L , SYNC = GND, I VL = 0mA, PGND = SGND,
C BYPASS = 0.22μF (low ESR), C VL = 4.7μF (ceramic), C V+ = 1μF (low ESR), C IN_HIGH = 1μF (ceramic), R IN_HIGH = 3.9k Ω , R OSC = 10k Ω ,
T J = -40°C to +125°C, unless otherwise noted.) (Note 2)
PARAMETER
IN_HIGH Startup Voltage
GATE Charge Current
GATE Output Voltage
GATE Turn-Off Pulldown
Current
SYMBOL
IN_HIGH
UVLO
I GATE_CH
V GATE -
V IN_HIGH
I GATE_PD
CONDITIONS
Rising, ON/OFF = IN_HIGH, GATE rising
Falling, ON/OFF = IN_HIGH, GATE falling
V IN_HIGH = V ON/OFF = 14V,
V GATE = V+ = 0V
V+ = V IN_HIGH = V ON/OFF = 4.5V,
I GATE = 1μA
V+ = V IN_HIGH = V ON/OFF = 14V,
I GATE = 1μA
V IN_HIGH = 14V, V ON/OFF = 0V, V+ = 0V,
V GATE = 5V
MIN
20
4.0
TYP
3.6
3.45
45
5.3
9
3.6
MAX
4.1
80
7.5
UNITS
V
μA
V
mA
STARTUP/V L REGULATOR
V L Undervoltage-Lockout Trip
Level
UVLO
V L falling
3.9
4.1
4.3
V
V L Undervoltage-Lockout
Hysteresis
180
mV
V L Output Voltage
V L LDO Short-Circuit Current
V L LDO Dropout Voltage
V L
I VL_SHORT
V LDO
I SOURCE_ = 0 to 40mA, 5.5V ≤ V+ ≤ 19V
V+ = V IN_HIGH = 5.2V
I SOURCE_ = 40mA, V+ = V IN_HIGH = 4.5V
5.0
5.2
130
300
5.5
550
V
mA
mV
BYPASS OUTPUT
BYPASS Voltage
BYPASS Load Regulation
V BYPASS
Δ V BYPASS
I BYPASS = 0μA
0 < I BYPASS < 100μA (sourcing)
1.98
2.00
2
2.02
5
V
mV
SOFT-START/SOFT-STOP
Digital Ramp Period Soft-
Start/Soft-Stop
Soft-Start/Soft-Stop Steps
Internal 6-bit DAC
2048
64
f SW
Clock
Cycles
Steps
VOLTAGE-ERROR AMPLIFIER
FB_ Input Bias Current
I FB_
250
nA
FB_ Input-Voltage Set Point
FB_ to COMP_
Transconductance
V FB_
g M
-40°C ≤ T A ≤ +85°C
-40°C ≤ T A ≤ +125°C
0.783
0.785
1.4
0.8
2.4
0.809
0.814
3.4
V
mS
INTERNAL MOSFETS
On-Resistance High-Side
MOSFET Converter 1
R ON1
I SWITCH = 100mA, BST1/VDD1 to
V SOURCE1 = 5.2V
I SWITCH = 100mA, BST1/VDD1 to
V SOURCE1 = 4.5V
195
208
355
m Ω
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3
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