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参数资料
| 型号： | MAX8660AETL+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 9/44页 |
| 文件大小： | 0K |
| 描述： | IC POWER MANAGE XSCALE 40-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 60 |
| 应用： | 处理器 |
| 电源电压： | 2.6 V ~ 6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-WFQFN 裸露焊盘 |
| 供应商设备封装： | 40-TQFN-EP（5x5） |
| 包装： | 管件 |
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High-Efficiency, Low-I Q , PMICs with Dynamic
Voltage Management for Mobile Applications
ELECTRICAL CHARACTERISTICS (continued)
(V IN = V IN5 = V IN67 = V IN8 = 3.6V, Figure 3, T A = -40°C to +85°C, unless otherwise noted. Typical values are at T A = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
LBO , RSO Output-High Leakage
Current
LBO Output Low Level
Minimum V IN for LBO Assertion
V IN = 6V, T A = +25 ° C
2.6V ≤ V IN ≤ 6V, sinking 3mA
V IN = 1V, sinking 100μA
LBO is forced low when the device is in
UVLO
1
0.2
0.2
0.4
μA
V
V
LBO Deassert Delay
t VBHBFH
Figure 6
0
3
μs
LBF and LBR Input Bias Current
T A = +25 ° C
T A = +85 ° C
-50
0
0.5
+50
nA
RESET ( MR , RSO)
RSO Threshold
RSO Deassert Delay
V RSOTH
t VBHRSTH
Voltage on V8, falling, hysteresis is 5% (typ)
Figure 6
2.1
20
2.2
24
2.3
28
V
ms
RSO Output-High Leakage
Current
RSO Output Low Level
Minimum V IN for RSO Assertion
MR Input High Level
MR Input Low Level
V IN = 6V, T A = +25 ° C
2.6V ≤ V IN ≤ 6V, sinking 3mA
V IN = 1V, sinking 100μA
RSO is forced low when the device is in
UVLO
2.6V ≤ V IN ≤ 6V
2.6V ≤ V IN ≤ 6V
1
1.4
0.2
0.2
0.4
0.4
μA
V
V
V
V
MR Input Leakage Current
MR Minimum Pulse Width
t MR
V IN = 6V, T A = +25 ° C
-0.2
1
+0.2
μA
μs
THERMAL-OVERLOAD PROTECTION
Thermal-Shutdown Temperature
Thermal-Shutdown Hysteresis
T J rising
+160
15
° C
° C
ENABLE INPUTS (EN1, EN2, EN34, EN5)
EN_ Input High Level
EN_ Input Low Level
2.6V ≤ V IN ≤ 6V
2.6V ≤ V IN ≤ 6V
1.4
0.4
V
V
EN_ Input Leakage Current
V IN = 6V, T A = +25 ° C
-0.2
+0.2
μA
I 2 C LOGIC (SDA, SCL, SRAD)
SCL, SDA Input High Voltage
SCL, SDA Input Low Voltage
SCL, SDA Input Hysteresis
1.4
0.1
0.4
V
V
V
SCL, SDA Input Current
T A = +25 ° C, IN = AGND, V IN = 6V
-10
+10
μA
SDA Output Low Voltage
SRAD Input High Level
SRAD Input Low Level
2.6V ≤ V IN ≤ 6V, sinking 3mA
2.6V ≤ V IN ≤ 6V
2.6V ≤ V IN ≤ 6V
1.4
0.2
0.4
V
V
V
V IN = 6V, T A = +25 C
SRAD Input Leakage Current
o
-0.2
+0.2
μA
9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX8660AETL+ | 功能描述:PMIC 解决方案 Low-IQ PMIC w/Dynamic V Mgt RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
| MAX8660AETL+T | 功能描述:PMIC 解决方案 Low-IQ PMIC w/Dynamic V Mgt RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
| MAX8660BETL+ | 功能描述:PMIC 解决方案 Low-IQ PMIC w/Dynamic V Mgt RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
| MAX8660BETL+T | 功能描述:PMIC 解决方案 Low-IQ PMIC w/Dynamic V Mgt RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
| MAX8660ETL/V+ | 功能描述:PMIC 解决方案 Low-IQ PMIC w/Dynamic V Mgt RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
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