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| 型号： | MAX8671XETL+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 4/44页 |
| 文件大小： | 0K |
| 描述： | IC PMIC W/CHARGER 40-TQFN-EP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 功能： | 充电管理 |
| 电池化学： | 锂离子（Li-Ion）、锂聚合物（Li-Pol） |
| 电源电压： | 4.1 V ~ 6.6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-WFQFN 裸露焊盘 |
| 供应商设备封装： | 40-TQFN-EP（5x5） |
| 包装： | 带卷 (TR) |
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PMIC with Integrated Charger and
Smart Power Selector for Handheld Devices
ABSOLUTE MAXIMUM RATINGS
USB, DC, PEN1 to AGND.......................................-0.3V to +16V
SYS, BAT, PV1, PV2, PV3 to AGND..........................-0.3V to +6V
PG1, PG2, PG3, AGND .........................................-0.3V to +0.3V
PV1, PV2, PV3 to SYS............................................-0.3V to +0.3V
VL to AGND ...........................................................-0.3V to +4.0V
CISET, DISET, BVSET, CT, THM to AGND..-0.3V to (V VL + 0.3V)
PV4, PV5, BP, FB1, FB2, FB3 to AGND ....-0.3V to (V SYS + 0.3V)
PEN2, USUS, CEN , EN, PWM to AGND ..................-0.3V to +6V
CST1, CST2, DOK , UOK to AGND ...........................-0.3V to +6V
OUT4, FB4 to AGND .................................-0.3V to (V PV4 + 0.3V)
OUT5, FB5 to AGND .................................-0.3V to (V PV5 + 0.3V)
LX1, LX2, LX3 Continuous RMS Current (Note 1).................1.5A
BAT Continuous Current .......................................................1.5A
SYS Continuous Current .......................................................1.5A
Continuous Power Dissipation (T A = +70°C)
40-Pin, 5mm x 5mm, Thin QFN (derate 35.7mW/°C
above +70°C)..............................................................2857mW
Operating Junction Temperature.....................................+150°C
Storage Junction Temperature Range ..............-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: LX_ has internal clamp diodes to PG_ and PV_. Applications that forward bias these diodes must take care not to exceed
the package power dissipation limits.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(DC, USB, BVSET, UOK , DOK , LX_ unconnected; V THM = V L /2, V PG_ = V AGND = 0V, V BAT = 4V, CEN = low, USUS = low, EN = high,
V PEN1 = V PEN2 = 3.3V, V PWM = 0V, C OUT4 = 1μF, C OUT5 = 1μF, C SYS = 10μF, PV1 = PV2 = PV3 = PV4 = PV5 = SYS, R DISET = 3k Ω ,
R CISET = 3k Ω , C VL = 0.1μF, C CT = 0.15μF, C BP = 0.01μF, V FB1 = 1.1V, V FB2 = 1.1V, V FB3 = 1.1V, T A = -40°C to +85°C, unless other-
wise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC POWER INPUT (V DC = 5.0V, EN = low)
DC Voltage Range
V DC
Operating voltage
Withstand voltage
4.1
0
6.6
14
V
SYS Regulation Voltage
DC Undervoltage Threshold
DC Overvoltage Threshold
V SYS_REG
V DCL
V DCH
V DC = 6V, USUS = low, CEN = high, system
current is less than the input current limit
V DC rising, 500mV typical hysteresis
V DC rising, 400mV typical hysteresis
5.2
3.95
6.8
5.3
4.00
6.9
5.4
4.05
7.0
V
V
V
PEN1 = low,
V DC = 6V, V SYS = 5V PEN2 = low,
USUS = low
USB unconnected,
90
95
100
DC Current Limit
I DCLIM
CEN = low,
T A = +25°C,
PEN1 = low,
PEN2 = high,
450
475
500
mA
VL = no load
USUS = low
R DISET Resistance Range
(Note 3)
PEN1 = high,
R DISET = 3k Ω
950
3
1000
1050
6
k Ω
PEN1 = low, USUS = high
USUS = low, CEN = low;
0.11
DC Quiescent Current
I DCIQ
I SYS = 0mA, I BAT = 0mA, EN = low;
VL no load
1.1
mA
USUS = low, CEN = high;
I SYS = 0mA, V EN = 0V, VL no load
0.7
Minimum DC-to-BAT Voltage
Headroom
Minimum DC-to-SYS Voltage
Headroom
V DC falling, 200mV hysteresis
V DC falling, 200mV hysteresis
0
0
15
15
30
30
mV
mV
DC-to-SYS Dropout Resistance
R DS
V DC = 5V, I SYS = 400mA, USUS = low
0.325
0.600
Ω
4
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