- 您现在的位置：买卖IC网 > PDF目录377893 > MB85396A-60 (Fujitsu Limited) CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36位 同步动态RAM) PDF资料下载
参数资料
| 型号： | MB85396A-60 |
| 厂商： | Fujitsu Limited |
| 英文描述： | CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36位 同步动态RAM) |
| 中文描述： | 4米× 36Bit的CMOS同步动态随机存取存储器（SDRAM）的CMOS（4分× 36位同步动态RAM）的 |
| 文件页数： | 4/10页 |
| 文件大小： | 232K |
| 代理商： | MB85396A-60 |
4
MB85396A-60/MB85396A-70
I
RECOMMENDED OPERATING CONDITIONS
(Referenced to V
SS
)
Parameter
Note: *Undershoots of up to –2.0 volts with a pulse width not exceeding 10 ns are acceptable.
I
DC CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Notes: *1.
Referenced to V
I
CC
depends on the output load conditions and cycle rate. The specific values are obtained with the
output open.
I
CC
depends on the number of address change as RAS = V
I
CC1
, I
CC3
, and I
CC5
are specified at one time of address change during RAS = V
I
CC4
is specified at one time of address change during one Page cycle.
SS
.
*2.
IL
and CAS = V
IH
, VIL > –0.3 V.
and CAS = V
IL
IH
.
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage, all inputs
V
IH
2.4
—
6.5
V
Input Low Voltage, all inputs*
V
IL
–0.3
—
0.8
V
°
C
Ambient Temperature
T
A
0
25
70
Parameter
Symbol
Test Condition
Min.
Max. Unit
Output High Voltage*
1
V
OH
I
OH
= –5 mA
2.4
—
V
Output Low Voltage*
1
V
OL
I
OL
= 4.2 mA
—
0.4
V
Input Leakage Current
RAS0 – RAS2
I
I (
L
)
0 V
4.5 V
V
SS
not under test = 0 V
≤
V
≤
IN
V
≤
CC
5.5 V,
≤
5.5 V,
= 0 V, all other pins
–40
40
μ
A
CAS0 – CAS3
–30
30
Address, WE
–80
80
Output Leakage Current
I
O(
L
)
0 V
4.5 V
Data out disabled
≤
V
≤
OUT
V
≤
5.5 V,
≤
5.5 V,
CC
–20
20
μ
A
Operating Current*
(Average power supply
current)
2
MB85396A-60
I
CC1
RAS & CAS cycling,
t
RC
= min.
—
1084
mA
MB85396A-70
—
936
Standby Current*
(Power supply current)
2
TTL Level
I
CC2
RAS = CAS =V
IH
—
24
mA
CMOS Level
RAS = CAS
≥
V
CC
–0.2 V
—
12
Refresh Current #1*
(Average power supply
current)
2
MB85396A-60
I
CC3
CAS = V
t
RC
= min.
IH
, RAS = cycling,
—
1084
mA
MB85396A-70
—
936
Fast Page Mode
Current*
2
MB85396A-60
I
CC4
RAS = V
t
RC
= min.
IL
, CAS = cycling,
—
724
mA
MB85396A-70
—
668
Refresh Current #2*
(Average power supply
current)
2
MB85396A-60
I
CC5
RAS = cycling, CAS-before-
RAS, t
RC
= min.
—
1036
mA
MB85396A-70
—
896
相关PDF资料 |
PDF描述 |
|---|---|
| MB85396A-70 | CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36位 同步动态RAM) |
| MB85502-012 | CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步动态RAM) |
| MB85502-015 | CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步动态RAM) |
| MB85R1002 | Memory FRAM |
| MB85R1002PFTN | Memory FRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:RAM 技术:ReRAM（电阻式 RAM） 存储容量:4Mb （512K x 8） 时钟频率:5MHz 写周期时间 - 字，页:17ms 存储器接口:SPI 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:8-SOIC（0.209"，5.30mm 宽） 供应商器件封装:8-SOP 标准包装:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
发布紧急采购，3分钟左右您将得到回复。